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Results: 1-25 | 26-40 |
Results: 26-40/40
Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition
Authors: Kim, KS Cheong, MG Hong, CH Yang, GM Lim, KY Suh, EK Lee, HJ
Citation: Ks. Kim et al., Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition, APPL PHYS L, 76(9), 2000, pp. 1149-1151
Optical absorption and anomalous photoconductivity in undoped n-type GaN
Authors: Chung, SJ Jeong, MS Cha, OH Hong, CH Suh, EK Lee, HJ Kim, YS Kim, BH
Citation: Sj. Chung et al., Optical absorption and anomalous photoconductivity in undoped n-type GaN, APPL PHYS L, 76(8), 2000, pp. 1021-1023
Growth of carbon-induced Ge quantum dots
Authors: Ihm, SH Seok, JH Lee, CH Kim, JY Suh, EK
Citation: Sh. Ihm et al., Growth of carbon-induced Ge quantum dots, J KOR PHYS, 35, 1999, pp. S1029-S1032
Growth and characterization of thick GaN films by the direct reaction of metallic Ga and NH3 in CVD reactor
Authors: Yang, SH Nahm, KS Ahn, SH Park, KS Suh, EK Lim, KY
Citation: Sh. Yang et al., Growth and characterization of thick GaN films by the direct reaction of metallic Ga and NH3 in CVD reactor, J KOR PHYS, 35(6), 1999, pp. 504-508
Electron transport properties of GaN epilayers grown by metal-organic chemical vapor deposition
Authors: Cheong, MG Kim, KS Lee, KJ Yang, GM Lim, KY Hong, CH Suh, EK Lee, HJ Yoshikawa, A
Citation: Mg. Cheong et al., Electron transport properties of GaN epilayers grown by metal-organic chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S244-S252
Growth and characterization of GaN thin films on beta-SiC/Si substrate using rapid thermal chemical vapor deposition
Authors: Mo, YH Nahm, KS Yang, SH Kim, KC Lee, WH Suh, EK Lim, KY
Citation: Yh. Mo et al., Growth and characterization of GaN thin films on beta-SiC/Si substrate using rapid thermal chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S364-S369
Investigations of Mg-doped GaN grown by metalorganic chemical vapor deposition
Authors: Oh, CS Kim, KS Lee, KJ Choi, JY Cho, HK Cha, OH Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ
Citation: Cs. Oh et al., Investigations of Mg-doped GaN grown by metalorganic chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S401-S404
Influence of epilayer thickness on optical properties in GaN films grown by MOCVD
Authors: Jeong, MS Lee, WH Lim, KY Suh, EK Lee, HJ An, HY
Citation: Ms. Jeong et al., Influence of epilayer thickness on optical properties in GaN films grown by MOCVD, J KOR PHYS, 34, 1999, pp. S415-S419
Correlation between energy transfer and phase separation in emissive polymer blends
Authors: Han, JH Lee, YS Nahm, KS Cho, EH Ko, SB Kim, CJ Jeon, IC Lee, WH Suh, EK Lee, YH
Citation: Jh. Han et al., Correlation between energy transfer and phase separation in emissive polymer blends, B KOR CHEM, 20(9), 1999, pp. 1093-1096
Defect related dark current and charge injection in Si1-xGex/Si multiple quantum wells
Authors: Huang, XL Jeong, MS Ihm, SH Cha, OH Kim, JY Suh, EK Lee, HJ
Citation: Xl. Huang et al., Defect related dark current and charge injection in Si1-xGex/Si multiple quantum wells, SOL ST ELEC, 43(5), 1999, pp. 953-959
Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells
Authors: Cheng, W Xia, JB Jeong, MS Huang, XL Kim, JY Ihm, SH Suh, EK Lee, HJ
Citation: W. Cheng et al., Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells, SOL ST COMM, 111(11), 1999, pp. 641-645
The surface modification of Si(111) substrates with SiNx for the growth ofhigh quality beta-SiC epilayers
Authors: Kim, KC Nahm, KS Suh, EK Hwang, YG
Citation: Kc. Kim et al., The surface modification of Si(111) substrates with SiNx for the growth ofhigh quality beta-SiC epilayers, J CRYST GR, 197(4), 1999, pp. 841-848
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
Authors: An, HY Cha, OH Kim, JH Yang, GM Lim, KY Suh, EK Lee, HJ
Citation: Hy. An et al., Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer, J APPL PHYS, 85(5), 1999, pp. 2888-2893
Epitaxial growth of void-free 3C-SiC on Si with heterointerface modification by SiNx
Authors: Kim, KC Nahm, KS Suh, EK
Citation: Kc. Kim et al., Epitaxial growth of void-free 3C-SiC on Si with heterointerface modification by SiNx, EL SOLID ST, 1(4), 1998, pp. 191-193
Epitaxial growth of void free beta-SiC on Si by the pyrolysis of tetramethylsilane
Authors: Seo, YH Nahm, KS Kim, KC Shim, HW Suh, EK Lee, HJ
Citation: Yh. Seo et al., Epitaxial growth of void free beta-SiC on Si by the pyrolysis of tetramethylsilane, J KOR PHYS, 33, 1998, pp. S324-S329
Risultati: 1-25 | 26-40 |