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Results: 1-11 |
Results: 11
Identification of defects in undoped semi-insulating InP by positron lifetime
Authors: Mao, WD Wang, SJ Wang, Z Sun, NF Sun, TN Zhao, YW
Citation: Wd. Mao et al., Identification of defects in undoped semi-insulating InP by positron lifetime, CHIN PHYS L, 18(4), 2001, pp. 574-576
Hydrogen neutralization effect in bulk n-type LEC InP materials
Authors: Sun, NF Wu, XW Wu, X Zhao, YW Cao, LX Zhao, Q Guo, WL Zhang, J Bi, KY Sun, TN
Citation: Nf. Sun et al., Hydrogen neutralization effect in bulk n-type LEC InP materials, J CRYST GR, 225(2-4), 2001, pp. 244-248
Native donors and compensation in Fe-doped liquid encapsulated CzochralskiInP
Authors: Zhao, YW Luo, YL Fung, S Beling, CD Sun, NF Chen, XD Cao, LX Sun, TN Bi, KY Wu, X
Citation: Yw. Zhao et al., Native donors and compensation in Fe-doped liquid encapsulated CzochralskiInP, J APPL PHYS, 89(1), 2001, pp. 86-90
H-vacancy complex VInH4 abundance and its influences in n-type LEC InP
Authors: Fung, S Zhao, YW Sun, NF Beling, CD Chen, XD Bi, KY Wu, X Zhang, J Sun, TN
Citation: S. Fung et al., H-vacancy complex VInH4 abundance and its influences in n-type LEC InP, J CRYST GR, 211(1-4), 2000, pp. 174-178
Carrier mobility distribution in annealed undoped LEC InP material
Authors: Zhao, YW Fung, S Beling, CD Sun, NF Chen, XD Sun, TN Zhang, J Bi, KY Wu, X
Citation: Yw. Zhao et al., Carrier mobility distribution in annealed undoped LEC InP material, J CRYST GR, 211(1-4), 2000, pp. 179-183
Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Authors: Xu, XL Beling, CD Fung, S Zhao, YW Sun, NF Sun, TN Zhang, QL Zhan, HH Sun, BQ Wang, JN Ge, WK Wong, PC
Citation: Xl. Xu et al., Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system, APPL PHYS L, 76(2), 2000, pp. 152-154
Thermally induced conduction type conversion in n-type InP
Authors: Fung, S Zhao, YW Beling, CD Xu, XL Sun, NF Sun, TN Chen, XD
Citation: S. Fung et al., Thermally induced conduction type conversion in n-type InP, J APPL PHYS, 86(4), 1999, pp. 2361-2363
Compensation defects in annealed undoped liquid encapsulated Czochralski InP
Authors: Fung, S Zhao, YW Xu, XL Chen, XD Sun, NF Sun, TN Zhang, RG Liu, SL Yang, GY Guo, XB Sun, YZ Yan, RY Hua, QH
Citation: S. Fung et al., Compensation defects in annealed undoped liquid encapsulated Czochralski InP, J APPL PHYS, 86(2), 1999, pp. 951-955
Effects of annealing on the electrical properties of Fe-doped InP
Authors: Zhao, YW Fung, S Beling, CD Sun, NF Sun, TN Chen, XD Yang, GY
Citation: Yw. Zhao et al., Effects of annealing on the electrical properties of Fe-doped InP, J APPL PHYS, 86(2), 1999, pp. 981-984
Positron-lifetime study of compensation defects in undoped semi-insulatingInP
Authors: Beling, CD Deng, AH Shan, YY Zhao, YW Fung, S Sun, NF Sun, TN Chen, XD
Citation: Cd. Beling et al., Positron-lifetime study of compensation defects in undoped semi-insulatingInP, PHYS REV B, 58(20), 1998, pp. 13648-13653
Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP
Authors: Fung, S Zhao, YW Beling, CD Xu, XL Gong, M Sun, NF Sun, TN Chen, XD Zhang, RG Liu, SL Yang, GY Qian, JJ Sun, MF Liu, XL
Citation: S. Fung et al., Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP, APPL PHYS L, 73(9), 1998, pp. 1275-1277
Risultati: 1-11 |