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Results: 1-25 | 26-50 | 51-53
Results: 1-25/53
High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
Authors: Krukowski, S Bockowski, M Lucznik, B Grzegory, I Porowski, S Suski, T Romanowski, Z
Citation: S. Krukowski et al., High-nitrogen-pressure growth of GaN single crystals: doping and physical properties, J PHYS-COND, 13(40), 2001, pp. 8881-8890
Nonlinear spectroscopy of homoepitaxial GaN
Authors: Schweitzer, C Frohlich, D Reimann, K Prystawko, P Leszczynski, M Suski, T
Citation: C. Schweitzer et al., Nonlinear spectroscopy of homoepitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 156-158
The role of internal electric fields in III-N quantum structure
Authors: Perlin, P Lepkowski, SP Teisseyre, H Suski, T
Citation: P. Perlin et al., The role of internal electric fields in III-N quantum structure, ACT PHY P A, 100(2), 2001, pp. 261-270
Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319
Authors: Perlin, P Gorczyca, I Suski, T Wisniewski, P Lepkowski, S Christensen, NE Svane, A Hansen, M DenBaars, SP Damilano, B Grandjean, N Massies, J
Citation: P. Perlin et al., Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319, PHYS REV B, 6411(11), 2001, pp. 5319
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203
Authors: Bayerl, MW Brandt, MS Ambacher, O Stutzmann, M Glaser, ER Henry, RL Wickenden, AE Koleske, DD Suski, T Grzegory, I Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205
Authors: Oila, J Ranki, V Kivioja, J Saarinen, K Hautojarvi, P Likonen, J Baranowski, JM Pakula, K Suski, T Leszczynski, M Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Phonon dispersion curves in wurtzite-structure GaN determined by inelasticx-ray scattering
Authors: Ruf, T Serrano, J Cardona, M Pavone, P Pabst, M Krisch, M D'Astuto, M Suski, T Grzegory, I Leszczynski, M
Citation: T. Ruf et al., Phonon dispersion curves in wurtzite-structure GaN determined by inelasticx-ray scattering, PHYS REV L, 86(5), 2001, pp. 906-909
III-N ternary epi-layers grown on the GaN bulk crystals
Authors: Leszczynski, M Prystawko, P Czernecki, R Lehnert, J Suski, T Perlin, P Wisniewski, P Grzegory, I Nowak, G Porowski, S Albrecht, M
Citation: M. Leszczynski et al., III-N ternary epi-layers grown on the GaN bulk crystals, J CRYST GR, 231(3), 2001, pp. 352-356
Optical and electrical properties of Be doped GaN bulk crystals
Authors: Suski, T Litwin-Staszewska, E Perlin, P Wisniewski, P Teisseyre, H Grzegory, I Bockowski, M Porowski, S Saarinen, K Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Authors: Frayssinet, E Knap, W Krukowski, S Perlin, P Wisniewski, P Suski, T Grzegory, I Porowski, S
Citation: E. Frayssinet et al., Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals, J CRYST GR, 230(3-4), 2001, pp. 442-447
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
Authors: Litwin-Staszewska, E Suski, T Piotrzkowski, R Grzegory, I Bockowski, M Robert, JL Konczewicz, L Wasik, D Kaminska, E Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
Authors: Lepkowski, SP Teisseyre, H Suski, T Perlin, P Grandjean, N Massies, J
Citation: Sp. Lepkowski et al., Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells, APPL PHYS L, 79(10), 2001, pp. 1483-1485
Picosecond Z-scan measurements on bulk GaN crystals
Authors: Pacebutas, V Stalnionis, A Krotkus, A Suski, T Perlin, P Leszczynski, M
Citation: V. Pacebutas et al., Picosecond Z-scan measurements on bulk GaN crystals, APPL PHYS L, 78(26), 2001, pp. 4118-4120
Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
Authors: Jursenas, S Kurilcik, N Kurilcik, G Zukauskas, A Prystawko, P Leszcynski, M Suski, T Perlin, P Grzegory, I Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight
Authors: Clerjaud, B Cote, D Lebkiri, A Naud, C Baranowski, JM Pakula, K Wasik, D Suski, T
Citation: B. Clerjaud et al., Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight, PHYS REV B, 61(12), 2000, pp. 8238-8241
The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Authors: Kuball, M Hayes, JM Suski, T Jun, J Tan, HH Williams, JS Jagadish, C
Citation: M. Kuball et al., The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films, MRS I J N S, 5, 2000, pp. NIL_635-NIL_640
Pressure studies of band structure, defects and impurities in group III nitrides
Authors: Perlin, P Suski, T Skierbiszewski, C Wisniewski, P
Citation: P. Perlin et al., Pressure studies of band structure, defects and impurities in group III nitrides, HIGH PR RES, 18(1-6), 2000, pp. 21-28
The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure
Authors: Teisseyre, H Ochalski, TJ Perlin, P Suski, T Leszczynski, M Grzegory, I Bockowski, M Lucznik, B Bugajski, M Palczewska, M Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory
Authors: Lawniczak-Jablonska, K Suski, T Gorczyca, I Christensen, NE Attenkofer, KE Perera, RCC Gullikson, EM Underwood, JH Ederer, DL Weber, ZL
Citation: K. Lawniczak-jablonska et al., Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory, PHYS REV B, 61(24), 2000, pp. 16623-16632
Electron spin resonance of erbium in gallium nitride
Authors: Palczewska, M Wolos, A Kaminska, M Grzegory, I Bockowski, M Krukowski, S Suski, T Porowski, S
Citation: M. Palczewska et al., Electron spin resonance of erbium in gallium nitride, SOL ST COMM, 114(1), 2000, pp. 39-42
Infrared studies on GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Prystawko, P Leszczynski, M Grzegory, I Suski, T Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared studies on GaN single crystals and homoepitaxial layers, J CRYST GR, 218(2-4), 2000, pp. 161-166
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering
Authors: Kuball, M Hayes, JM Suski, T Jun, J Leszczynski, M Domagala, J Tan, HH Williams, JS Jagadish, C
Citation: M. Kuball et al., High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering, J APPL PHYS, 87(6), 2000, pp. 2736-2741
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Authors: Frayssinet, E Knap, W Lorenzini, P Grandjean, N Massies, J Skierbiszewski, C Suski, T Grzegory, I Porowski, S Simin, G Hu, X Khan, MA Shur, MS Gaska, R Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
Risultati: 1-25 | 26-50 | 51-53