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Results: 1-25/56
Authors:
Kuznetsov, AY
Christensen, JS
Monakhov, EV
Lindgren, AC
Radamson, HH
Nylandsted-Larsen, A
Svensson, BG
Citation: Ay. Kuznetsov et al., Dopant redistribution and formation of electrically active complexes in SiGe, MAT SC S PR, 4(1-3), 2001, pp. 217-223
Authors:
Hermansson, J
Murin, LI
Hallberg, T
Markevich, VP
Lindstrom, JL
Kleverman, M
Svensson, BG
Citation: J. Hermansson et al., Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm(-1) band, PHYSICA B, 302, 2001, pp. 188-192
Authors:
Thungstrom, G
Dubaric, E
Svensson, BG
Citation: G. Thungstrom et al., Processing of silicon UV-photodetectors, NUCL INST A, 460(1), 2001, pp. 165-184
Authors:
Leveque, P
Christensen, JS
Kuznetsov, AY
Svensson, BG
Larsen, AN
Citation: P. Leveque et al., Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C, NUCL INST B, 178, 2001, pp. 337-341
Authors:
Leveque, P
Pellegrino, P
Hallen, A
Svensson, BG
Privitera, V
Citation: P. Leveque et al., Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon, NUCL INST B, 174(3), 2001, pp. 297-303
Authors:
Janson, MS
Hallen, A
Linnarsson, MK
Svensson, BG
Citation: Ms. Janson et al., Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202, PHYS REV B, 6419(19), 2001, pp. 5202
Authors:
Pellegrino, P
Leveque, P
Lalita, J
Hallen, A
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211, PHYS REV B, 6419(19), 2001, pp. 5211
Authors:
Monakhov, EV
Kuznetsov, AY
Svensson, BG
Citation: Ev. Monakhov et al., Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322, PHYS REV B, 6324(24), 2001, pp. 5322
Authors:
Mannino, G
Whelan, S
Schroer, E
Privitera, V
Leveque, P
Svensson, BG
Napolitani, E
Citation: G. Mannino et al., An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon, J APPL PHYS, 89(10), 2001, pp. 5381-5385
Authors:
Leveque, P
Kuznetsov, AY
Christensen, JS
Svensson, BG
Larsen, AN
Citation: P. Leveque et al., Irradiation enhanced diffusion of boron in delta-doped silicon, J APPL PHYS, 89(10), 2001, pp. 5400-5405
Authors:
Linnarsson, MK
Janson, MS
Zimmermann, U
Svensson, BG
Persson, POA
Hultman, L
Wong-Leung, J
Karlsson, S
Schoner, A
Bleichner, H
Olsson, E
Citation: Mk. Linnarsson et al., Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material, APPL PHYS L, 79(13), 2001, pp. 2016-2018
Authors:
Pellegrino, P
Leveque, P
Wong-Leung, J
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation, APPL PHYS L, 78(22), 2001, pp. 3442-3444
Authors:
Aberg, D
Hallen, A
Pellegrino, P
Svensson, BG
Citation: D. Aberg et al., Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers, APPL PHYS L, 78(19), 2001, pp. 2908-2910
Authors:
Kuznetsov, AY
Leveque, P
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Self-interstitial migration during ion irradiation of boron delta-doped silicon, MAT SC S PR, 3(4), 2000, pp. 279-283
Authors:
Monakhov, EV
Kuznetsov, AY
Svensson, BG
Larsen, AN
Citation: Ev. Monakhov et al., Thermal donor and antimony energy levels in relaxed Si1-xGex layers, PHYS REV B, 61(3), 2000, pp. 1708-1711
Authors:
Janson, MS
Hallen, A
Linnarsson, MK
Svensson, BG
Nordell, N
Karlsson, S
Citation: Ms. Janson et al., Electric-field-assisted migration and accumulation of hydrogen in silicon carbide, PHYS REV B, 61(11), 2000, pp. 7195-7198
Authors:
Schmidt, DC
Barbot, JF
Blanchard, C
Godey, S
Ntsoenzok, E
Svensson, BG
Citation: Dc. Schmidt et al., Proximity gettering of platinum in silicon following implantation with alpha particles at low doses, MAT SCI E B, 71, 2000, pp. 182-185
Authors:
Svensson, BG
Petersson, E
Citation: Bg. Svensson et E. Petersson, Swarm site fidelity in the sex role-reversed dance fly Empis borealis, J INSECT B, 13(6), 2000, pp. 785-796
Authors:
Svensson, B
Lagerlof, J
Svensson, BG
Citation: B. Svensson et al., Habitat preferences of nest-seeking bumble bees (Hymenoptera : Apidae) in an agricultural landscape, AGR ECO ENV, 77(3), 2000, pp. 247-255
Authors:
Svensson, BG
Tallmark, B
Petersson, E
Citation: Bg. Svensson et al., Habitat heterogeneity, coexistence and habitat utilization in five backswimmer species (Notonecta spp.; Hemiptera, Notonectidae), AQUAT INSEC, 22(2), 2000, pp. 81-98
Authors:
Larsen, AN
Goubet, JJ
Mejlholm, P
Christensen, JS
Fanciulli, M
Gunnlaugsson, HP
Weyer, G
Petersen, JW
Resende, A
Kaukonen, M
Jones, R
Oberg, S
Briddon, PR
Svensson, BG
Lindstrom, JL
Dannefaer, S
Citation: An. Larsen et al., Tin-vacancy acceptor levels in electron-irradiated n-type silicon, PHYS REV B, 62(7), 2000, pp. 4535-4544
Authors:
Schmidt, DC
Svensson, BG
Seibt, M
Jagadish, C
Davies, G
Citation: Dc. Schmidt et al., Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon, J APPL PHYS, 88(5), 2000, pp. 2309-2317
Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers
Authors:
Monakhov, EV
Kuznetsov, AY
Svensson, BG
Citation: Ev. Monakhov et al., Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers, J APPL PHYS, 87(9), 2000, pp. 4629-4631
Authors:
Janson, MS
Linnarsson, MK
Hallen, A
Svensson, BG
Nordell, N
Bleichner, H
Citation: Ms. Janson et al., Transient enhanced diffusion of implanted boron in 4H-silicon carbide, APPL PHYS L, 76(11), 2000, pp. 1434-1436
Authors:
Schmidt, DC
Aberg, D
Svensson, BG
Lindstrom, JL
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation, MAT SCI E B, 68(2), 1999, pp. 67-71