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Results:
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Results: 9
Authors:
Bulyarskii, SV
Ambrozevich, AS
Svetukhin, VV
Dzhabrailov, TA
Citation: Sv. Bulyarskii et al., The effect of oxygen precipitates on the recombination characteristics of silicon, TECH PHYS L, 27(3), 2001, pp. 200-201
The clusterization parameters of neon, argon, krypton, and xenon calculated using their P-V diagrams
Authors:
L'vov, PE
Svetukhin, VV
Citation: Pe. L'Vov et Vv. Svetukhin, The clusterization parameters of neon, argon, krypton, and xenon calculated using their P-V diagrams, TECH PHYS L, 27(3), 2001, pp. 209-210
Authors:
Pchelintseva, TS
Prokof'eva, VK
Svetukhin, VV
Ambrozevich, AS
Rygalin, BN
Lysenko, LN
Citation: Ts. Pchelintseva et al., A study of the zirconium-oxygen interaction in silicon, TECH PHYS L, 27(10), 2001, pp. 852-854
Authors:
Bulyarskii, SV
L'vov, PE
Svetukhin, VV
Citation: Sv. Bulyarskii et al., The effect of clustering on the melting of III-V semiconductors, TECH PHYS, 46(9), 2001, pp. 1076-1081
Authors:
Bulyarskii, SV
Svetukhin, VV
Agafonova, OV
Grishin, AG
Il'in, PA
Citation: Sv. Bulyarskii et al., Growth of fractal lithium clusters in germanium, SEMICONDUCT, 35(8), 2001, pp. 861-863
Authors:
Svetukhin, VV
L'vov, PE
Citation: Vv. Svetukhin et Pe. L'Vov, Influence of the surface on the impurity solubility in small-size crystals, TECH PHYS L, 26(11), 2000, pp. 986-988
Authors:
Bulyarskii, SV
Svetukhin, VV
L'vov, PE
Citation: Sv. Bulyarskii et al., Thermodynamics of complex formation and defect clustering in semiconductors, SEMICONDUCT, 34(4), 2000, pp. 371-375
Authors:
L'vov, PE
Svetukhin, VV
Citation: Pe. L'Vov et Vv. Svetukhin, The clusterization effect on the parameters of equation of state of real gases, CHEM PHYS R, 18(2), 1999, pp. 405-412
Authors:
Bulyarskii, SV
Svetukhin, VV
Prikhod'ko, OV
Citation: Sv. Bulyarskii et al., Spatially inhomogeneous oxygen precipitation in silicon, SEMICONDUCT, 33(11), 1999, pp. 1157-1162
Risultati:
1-9
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