ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

Photoluminescence studies of beryllium doped GaAs/AlGaAs quantum wells

Authors: Hegde, SM Brown, GJ Szmulowicz, F Ehret, J

Citation: Sm. Hegde et al., Photoluminescence studies of beryllium doped GaAs/AlGaAs quantum wells, INFR PHYS T, 42(3-5), 2001, pp. 149-155

InAs/InGaSb photodetectors grown on GaAs bonded substrates

Authors: Vilela, MF Anselm, KA Sooriar, N Johnson, JL Lin, CH Brown, GJ Mahalingam, K Saxler, A Szmulowicz, F

Citation: Mf. Vilela et al., InAs/InGaSb photodetectors grown on GaAs bonded substrates, J ELEC MAT, 30(7), 2001, pp. 798-801

Type-II superlattice photodetector on a compliant GaAs substrate

Authors: Brown, GJ Szmulowicz, F Linville, R Saxler, A Mahalingham, K Lin, CH Kuo, CH Hwang, WY

Citation: Gj. Brown et al., Type-II superlattice photodetector on a compliant GaAs substrate, IEEE PHOTON, 12(6), 2000, pp. 684-686

Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

Authors: Shen, A Liu, HC Buchanan, M Gao, M Szmulowicz, F Brown, GJ Ehret, J

Citation: A. Shen et al., Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors, J VAC SCI A, 18(2), 2000, pp. 601-604

Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

Authors: Tomich, DH Eyink, KG Grazulis, L Brown, GL Szmulowicz, F Mahalingam, K Seaford, ML Kuo, CH Hwang, WY Lin, CH

Citation: Dh. Tomich et al., Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates, J ELEC MAT, 29(7), 2000, pp. 940-943

Temperature dependence of photoresponse in p-type GaAs/AlxGa1-xAs multiplequantum wells: Theory and experiment

Authors: Szmulowicz, F Shen, A Liu, HC Brown, GJ Wasilewski, ZR Buchanan, M

Citation: F. Szmulowicz et al., Temperature dependence of photoresponse in p-type GaAs/AlxGa1-xAs multiplequantum wells: Theory and experiment, PHYS REV B, 61(20), 2000, pp. 13798-13804

Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors

Authors: Shen, A Liu, HC Gao, M Dupont, E Buchanan, M Ehret, J Brown, GJ Szmulowicz, F

Citation: A. Shen et al., Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors, APPL PHYS L, 77(15), 2000, pp. 2400-2402

Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors

Authors: Shen, A Liu, HC Szmulowicz, F Buchanan, M Gao, M Brown, GJ Ehret, J

Citation: A. Shen et al., Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors, J APPL PHYS, 86(9), 1999, pp. 5232-5236

Intersubband infrared detector with optimized valence band quantum wells for 3-5 mu m wavelength region

Authors: Liu, HC Szmulowicz, F Wasilewski, ZR Buchanan, M Brown, GJ

Citation: Hc. Liu et al., Intersubband infrared detector with optimized valence band quantum wells for 3-5 mu m wavelength region, J APPL PHYS, 85(5), 1999, pp. 2972-2976

Magneto-optics of InAs/Ga1-xInxSb infrared superlattice diodes

Authors: Fuchs, F Ahlswede, E Weimar, U Pletschen, W Schmitz, J Hartung, M Jager, B Szmulowicz, F

Citation: F. Fuchs et al., Magneto-optics of InAs/Ga1-xInxSb infrared superlattice diodes, APPL PHYS L, 73(25), 1998, pp. 3760-3762

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