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Results: 1-23 |
Results: 23
REDUCTION KINETICS OF SURFACE RHODIUM OXIDE BY HYDROGEN AND CARBON-MONOXIDE AT AMBIENT GAS-PRESSURES AS PROBED BY TRANSIENT SURFACE-ENHANCED RAMAN-SPECTROSCOPY
Authors: WILLIAMS CT CHEN EKY TAKOUDIS CG WEAVER MJ
Citation: Ct. Williams et al., REDUCTION KINETICS OF SURFACE RHODIUM OXIDE BY HYDROGEN AND CARBON-MONOXIDE AT AMBIENT GAS-PRESSURES AS PROBED BY TRANSIENT SURFACE-ENHANCED RAMAN-SPECTROSCOPY, JOURNAL OF PHYSICAL CHEMISTRY B, 102(24), 1998, pp. 4785-4794
METHANOL OXIDATION ON RHODIUM AS PROBED BY SURFACE-ENHANCED RAMAN ANDMASS SPECTROSCOPIES - ADSORBATE STABILITY, REACTIVITY, AND CATALYTIC RELEVANCE
Authors: WILLIAMS CT TAKOUDIS CG WEAVER MJ
Citation: Ct. Williams et al., METHANOL OXIDATION ON RHODIUM AS PROBED BY SURFACE-ENHANCED RAMAN ANDMASS SPECTROSCOPIES - ADSORBATE STABILITY, REACTIVITY, AND CATALYTIC RELEVANCE, JOURNAL OF PHYSICAL CHEMISTRY B, 102(2), 1998, pp. 406-416
SURFACE-POTENTIALS OF METAL-GAS INTERFACES COMPARED WITH ANALOGOUS ELECTROCHEMICAL SYSTEMS AS PROBED BY ADSORBATE VIBRATIONAL FREQUENCIES
Authors: WEAVER MJ WILLIAMS CT ZOU SZ CHAN HYH TAKOUDIS CG
Citation: Mj. Weaver et al., SURFACE-POTENTIALS OF METAL-GAS INTERFACES COMPARED WITH ANALOGOUS ELECTROCHEMICAL SYSTEMS AS PROBED BY ADSORBATE VIBRATIONAL FREQUENCIES, Catalysis letters, 52(3-4), 1998, pp. 181-190
IN-SITU REAL-TIME STUDIES OF HETEROGENEOUS CATALYTIC MECHANISMS AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND MASS SPECTROSCOPIES
Authors: WILLIAMS CT CHAN HYH TOLIA AA WEAVER MJ TAKOUDIS CG
Citation: Ct. Williams et al., IN-SITU REAL-TIME STUDIES OF HETEROGENEOUS CATALYTIC MECHANISMS AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND MASS SPECTROSCOPIES, Industrial & engineering chemistry research, 37(6), 1998, pp. 2307-2315
METHANOL OXIDATION ON PALLADIUM COMPARED TO RHODIUM AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND MASS SPECTROSCOPIES
Authors: CHAN HYH WILLIAMS CT WEAVER MJ TAKOUDIS CG
Citation: Hyh. Chan et al., METHANOL OXIDATION ON PALLADIUM COMPARED TO RHODIUM AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND MASS SPECTROSCOPIES, Journal of catalysis, 174(2), 1998, pp. 191-200
ADSORPTION AND HYDROGENATION OF CARBON-MONOXIDE ON POLYCRYSTALLINE RHODIUM AT HIGH GAS-PRESSURES
Authors: WILLIAMS CT BLACK CA WEAVER MJ TAKOUDIS CG
Citation: Ct. Williams et al., ADSORPTION AND HYDROGENATION OF CARBON-MONOXIDE ON POLYCRYSTALLINE RHODIUM AT HIGH GAS-PRESSURES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(15), 1997, pp. 2874-2883
EXPRESSION FOR THE GROWTH-RATE OF SELECTIVE EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE, HYDROGEN-CHLORIDE, AND HYDROGEN IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION PANCAKE REACTOR
Authors: KONGETIRA P NEUDECK GW TAKOUDIS CG
Citation: P. Kongetira et al., EXPRESSION FOR THE GROWTH-RATE OF SELECTIVE EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE, HYDROGEN-CHLORIDE, AND HYDROGEN IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION PANCAKE REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1902-1907
EFFECTS OF WATER-VAPOR AND CHLORINE ON THE EPITAXIAL-GROWTH OF SI1-XGEX FILMS BY CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC ANALYSIS
Authors: LEE IM JANSONS A TAKOUDIS CG
Citation: Im. Lee et al., EFFECTS OF WATER-VAPOR AND CHLORINE ON THE EPITAXIAL-GROWTH OF SI1-XGEX FILMS BY CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 880-885
SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/
Authors: WANG WC DENTON JP NEUDECK GW LEE IM TAKOUDIS CG KOH MTK KVAM EP
Citation: Wc. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 138-141
ANALYSIS AND CHARACTERIZATION OF NATIVE-OXIDE GROWTH ON EPITAXIAL SI1-XGEX FILMS AFTER A CHEMICAL CLEAN
Authors: LEE IM TAKOUDIS CG
Citation: Im. Lee et Cg. Takoudis, ANALYSIS AND CHARACTERIZATION OF NATIVE-OXIDE GROWTH ON EPITAXIAL SI1-XGEX FILMS AFTER A CHEMICAL CLEAN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3154-3157
RAMAN SPECTRAL EVIDENCE OF REACTIVE OXIDE FORMATION DURING METHANOL OXIDATION ON POLYCRYSTALLINE RHODIUM AT HIGH GAS-PRESSURES
Authors: WILLIAMS CT TAKOUDIS CG WEAVER MJ
Citation: Ct. Williams et al., RAMAN SPECTRAL EVIDENCE OF REACTIVE OXIDE FORMATION DURING METHANOL OXIDATION ON POLYCRYSTALLINE RHODIUM AT HIGH GAS-PRESSURES, Journal of catalysis, 170(1), 1997, pp. 207-210
GROWTH-KINETICS OF FURNACE SILICON OXYNITRIDATION IN NITROUS-OXIDE AMBIENTS
Authors: SINGHVI S TAKOUDIS CG
Citation: S. Singhvi et Cg. Takoudis, GROWTH-KINETICS OF FURNACE SILICON OXYNITRIDATION IN NITROUS-OXIDE AMBIENTS, Journal of applied physics, 82(1), 1997, pp. 442-448
PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/
Authors: LEE IM TAKOUDIS CG WANG WC DENTON JP NEUDECK GW KOH MTK KVAM EP
Citation: Im. Lee et al., PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/, Journal of the Electrochemical Society, 144(3), 1997, pp. 1095-1099
PROCESS-PROPERTY RELATIONSHIPS BETWEEN SILICON SELECTIVE EPITAXIAL-GROWTH AMBIENTS AND DEGRADATION OF INSULATORS
Authors: GAYNOR W TAKOUDIS CG NEUDECK GW
Citation: W. Gaynor et al., PROCESS-PROPERTY RELATIONSHIPS BETWEEN SILICON SELECTIVE EPITAXIAL-GROWTH AMBIENTS AND DEGRADATION OF INSULATORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3224-3227
SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE CO-NO REACTION ON PLATINUM AND PALLADIUM
Authors: WILLIAMS CT TOLIA AA CHAN HYH TAKOUDIS CG WEAVER MJ
Citation: Ct. Williams et al., SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE CO-NO REACTION ON PLATINUM AND PALLADIUM, Journal of catalysis, 163(1), 1996, pp. 63-76
PROCESS-PROPERTY RELATIONSHIPS IN SI1-XGEX CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC AND KINETIC-STUDIES
Authors: LEE IMR TAKOUDIS CG
Citation: Imr. Lee et Cg. Takoudis, PROCESS-PROPERTY RELATIONSHIPS IN SI1-XGEX CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC AND KINETIC-STUDIES, Journal of the Electrochemical Society, 143(5), 1996, pp. 1719-1726
KINETICS AND MODELING OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX EPITAXIAL THIN-FILMS
Authors: LEE IM WANG WC NEUDECK GW TAKOUDIS CG
Citation: Im. Lee et al., KINETICS AND MODELING OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX EPITAXIAL THIN-FILMS, Chemical Engineering Science, 51(11), 1996, pp. 2681-2686
SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF NO REDUCTION OVER RHODIUM AT HIGH GAS-PRESSURES
Authors: WILLIAMS CT TOLIA AA WEAVER MJ TAKOUDIS CG
Citation: Ct. Williams et al., SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF NO REDUCTION OVER RHODIUM AT HIGH GAS-PRESSURES, Chemical Engineering Science, 51(10), 1996, pp. 1673-1682
SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE NO-H-2 REACTION ON RHODIUM
Authors: TOLIA AA WILLIAMS CT WEAVER MJ TAKOUDIS CG
Citation: Aa. Tolia et al., SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE NO-H-2 REACTION ON RHODIUM, Langmuir, 11(9), 1995, pp. 3438-3445
SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE CO-NO REACTION ON RHODIUM
Authors: TOLIA AA WILLIAMS CT TAKOUDIS CG WEAVER MJ
Citation: Aa. Tolia et al., SURFACE-ENHANCED RAMAN-SPECTROSCOPY AS AN IN-SITU REAL-TIME PROBE OF CATALYTIC MECHANISMS AT HIGH GAS-PRESSURES - THE CO-NO REACTION ON RHODIUM, Journal of physical chemistry, 99(13), 1995, pp. 4599-4608
SOFT LAB - A VIRTUAL LABORATORY FOR COMPUTATIONAL SCIENCE
Authors: HOFFMAN CM HOUSTIS EN RICE JR CATLIN AC AITATZES M WEERAWARANA S WANG NHL TAKOUDIS CG TAYLOR DG
Citation: Cm. Hoffman et al., SOFT LAB - A VIRTUAL LABORATORY FOR COMPUTATIONAL SCIENCE, Mathematics and computers in simulation, 36(4-6), 1994, pp. 479-491
SURFACE OXIDATION OF RHODIUM AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND X-RAY PHOTOELECTRON SPECTROSCOPIES
Authors: TOLIA AA SMILEY RJ DELGASS WN TAKOUDIS CG WEAVER MJ
Citation: Aa. Tolia et al., SURFACE OXIDATION OF RHODIUM AT AMBIENT PRESSURES AS PROBED BY SURFACE-ENHANCED RAMAN AND X-RAY PHOTOELECTRON SPECTROSCOPIES, Journal of catalysis, 150(1), 1994, pp. 56-70
FUNDAMENTALS OF 2-STEP ETCHING TECHNIQUES FOR IDEAL SILICON-HYDROGEN TERMINATION OF SILICON(111)
Authors: YANG SK PETER S TAKOUDIS CG
Citation: Sk. Yang et al., FUNDAMENTALS OF 2-STEP ETCHING TECHNIQUES FOR IDEAL SILICON-HYDROGEN TERMINATION OF SILICON(111), Journal of applied physics, 76(7), 1994, pp. 4107-4112
Risultati: 1-23 |