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Results: 1-11 |
Results: 11
ALIGNMENT OF GE 3-DIMENSIONAL ISLANDS ON FACETED SI(001) SURFACES
Authors: SAKAMOTO K MATSUHATA H TANNER MO WANG DW WANG KL
Citation: K. Sakamoto et al., ALIGNMENT OF GE 3-DIMENSIONAL ISLANDS ON FACETED SI(001) SURFACES, Thin solid films, 321, 1998, pp. 55-59
BISTABLE DIODES GROWN BY SILICON MOLECULAR-BEAM EPITAXY
Authors: ZHU XG ZHENG XY PAK M TANNER MO WANG KL
Citation: Xg. Zhu et al., BISTABLE DIODES GROWN BY SILICON MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 201-205
DEMONSTRATION OF SI HOMOJUNCTION FAR-INFRARED DETECTORS
Authors: PERERA AGU SHEN WZ LIU HC BUCHANAN M TANNER MO WANG KL
Citation: Agu. Perera et al., DEMONSTRATION OF SI HOMOJUNCTION FAR-INFRARED DETECTORS, Applied physics letters, 72(18), 1998, pp. 2307-2309
PHOTOLUMINESCENCE AND X-RAY CHARACTERIZATION OF RELAXED SI1-XGEX ALLOYS GROWN ON SILICON-ON-INSULATOR (SOI) AND IMPLANTED SOI SUBSTRATES
Authors: CHU MA TANNER MO HUANG FY WANG KL CHU GG GOORSKY MS
Citation: Ma. Chu et al., PHOTOLUMINESCENCE AND X-RAY CHARACTERIZATION OF RELAXED SI1-XGEX ALLOYS GROWN ON SILICON-ON-INSULATOR (SOI) AND IMPLANTED SOI SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 1278-1283
STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION
Authors: IM S EISEN F NICOLET MA TANNER MO WANG KL THEODORE ND
Citation: S. Im et al., STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION, Journal of applied physics, 81(4), 1997, pp. 1695-1699
FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS
Authors: PERERA AGU SHEN WZ MALLARD WC TANNER MO WANG KL
Citation: Agu. Perera et al., FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS, Applied physics letters, 71(4), 1997, pp. 515-517
A SI BISTABLE DIODE UTILIZING INTERBAND TUNNELING JUNCTIONS
Authors: ZHU X ZHENG X PAK M TANNER MO WANG KL
Citation: X. Zhu et al., A SI BISTABLE DIODE UTILIZING INTERBAND TUNNELING JUNCTIONS, Applied physics letters, 71(15), 1997, pp. 2190-2192
RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: TANNER MO CHU MA WANG KL MESHKINPOUR M GOORSKY MS
Citation: Mo. Tanner et al., RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 157(1-4), 1995, pp. 121-125
CHEMICAL ETCHING OF SI1-XGEX IN HF-H2O2-CH3COOH
Authors: CARNS TK TANNER MO WANG KL
Citation: Tk. Carns et al., CHEMICAL ETCHING OF SI1-XGEX IN HF-H2O2-CH3COOH, Journal of the Electrochemical Society, 142(4), 1995, pp. 1260-1266
NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5 SI PHOTODIODES NEAR 1.3 MU-M/
Authors: HUANG FY ZHU X TANNER MO WANG KL
Citation: Fy. Huang et al., NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5 SI PHOTODIODES NEAR 1.3 MU-M/, Applied physics letters, 67(4), 1995, pp. 566-568
HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS
Authors: CARNS TK CHUN SK TANNER MO WANG KL KAMINS TI TURNER JE LIE DYC NICOLET MA WILSON RG
Citation: Tk. Carns et al., HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1273-1281
Risultati: 1-11 |