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Results:
1-14
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Results: 14
Authors:
TAMBO T
NAKAMURA T
MAEDA K
UEBA H
TATSUYAMA C
Citation: T. Tambo et al., MOLECULAR-BEAM EPITAXY OF SRTIO3 FILMS ON SI(100)-2X1 WITH SRO BUFFERLAYER, JPN J A P 1, 37(8), 1998, pp. 4454-4459
Authors:
RAO BV
ATOJI M
LI DM
OKAMOTO T
TAMBO T
TATSUYAMA C
Citation: Bv. Rao et al., IN(4 X-3) RECONSTRUCTION MEDIATED HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SUBSTRATE, JPN J A P 2, 37(11A), 1998, pp. 1297-1300
Authors:
LI DM
ATOJI M
YAMAZAKI M
OKAMOTO T
TAMBO T
TATSUYAMA C
Citation: Dm. Li et al., THE ROLE OF (4 X-3) SURFACE RECONSTRUCTION INDUCED BY IN ADSORPTION FOR THE HETEROEPITAXIAL GROWTH OF INSB ON SI(001)-2X1 SURFACE, Applied surface science, 132, 1998, pp. 101-106
Authors:
ISLAM ABMO
ASAI K
LIM KK
TAMBO T
TATSUYAMA C
Citation: Abmo. Islam et al., INITIAL-STAGE OF THE GROWTH OF GAS THIN-FILMS ON GAAS, Applied surface science, 123, 1998, pp. 508-512
Authors:
ISLAM ABMO
ASAI K
LIM KK
TAMBO T
TATSUYAMA C
Citation: Abmo. Islam et al., INTERFACE FORMATION BETWEEN LAYERED-COMPOUND GAS AND GAAS(111)A SURFACE, Surface science, 416(1-2), 1998, pp. 295-304
Authors:
OBATA T
KOMEDA K
NAKAO T
UEBA H
TATSUYAMA C
Citation: T. Obata et al., THE EFFECT OF BUFFER LAYERS ON STRUCTURAL QUALITY OF SI0.7GE0.3 LAYERS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied surface science, 117, 1997, pp. 507-511
Authors:
MORI M
TSUBOSAKI Y
TAMBO T
UEBA H
TATSUYAMA C
Citation: M. Mori et al., GROWTH OF INSB FILMS ON A SI(001) SUBSTRATE WITH GE BUFFER LAYER, Applied surface science, 117, 1997, pp. 512-517
Authors:
TATSUYAMA C
NISHIWAKI H
ASAI K
LIM KK
TAMBO T
UEBA H
Citation: C. Tatsuyama et al., SUBSTRATE ORIENTATION DEPENDENCE OF THE GROWTH OF GASE THIN-FILMS ON GAAS, Applied surface science, 117, 1997, pp. 523-529
Authors:
TAMBO T
KONISHI S
TAKEDA S
YAMADA N
UEBA H
TATSUYAMA C
Citation: T. Tambo et al., SPECULAR BEAM INTENSITY AND SURFACE-MORPHOLOGY OF BSCO FILMS GROWN BYMBE, Thin solid films, 300(1-2), 1997, pp. 223-227
Authors:
OBATA T
KOMEDA K
NAKAO T
UEBA H
TATSUYAMA C
Citation: T. Obata et al., STRUCTURAL CHARACTERIZATION OF SI0.7GE0.3 LAYERS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 81(1), 1997, pp. 199-204
Authors:
MORI M
LI DM
YAMAZAKI M
TAMBO T
UEBA H
TATSUYAMA C
Citation: M. Mori et al., HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SURFACE VIA GE BUFFER LAYERS, Applied surface science, 104, 1996, pp. 563-569
Authors:
IZUMI T
NISHIWAKI H
TAMBO T
TATSUYAMA C
Citation: T. Izumi et al., GA-SE FILMS GROWN ON A GAAS(001) SURFACE AT HIGH-TEMPERATURE USING A THERMAL EVAPORATION OF GASE, Applied surface science, 104, 1996, pp. 570-574
Authors:
FUJITA K
IZUMI T
OHSAKI K
TAMBO T
UEBA H
TATSUYAMA C
Citation: K. Fujita et al., GROWTH OF GASE LAYERED COMPOUND ON A GAAS (001) SURFACE, Thin solid films, 247(1), 1994, pp. 134-139
Authors:
TAMAGAWA T
SHINTANI T
UEBA H
TATSUYAMA C
NAKAGAWA K
MIYAO M
Citation: T. Tamagawa et al., STRUCTURAL CHARACTERIZATION OF SI GE SUPERLATTICES GROWN ON AN SI(001) SURFACE BY MOLECULAR-BEAM EPITAXY/, Thin solid films, 237(1-2), 1994, pp. 282-290
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