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Results:
1-16
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Results: 16
Authors:
KAWAKAMI T
KOIDE Y
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: T. Kawakami et al., ELECTRICAL-PROPERTIES AT P-ZNSE METAL INTERFACES/, Journal of electronic materials, 27(8), 1998, pp. 929-935
Authors:
KAGAWA T
KOIDE Y
OKU T
MORI H
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: T. Kagawa et al., EFFECTS OF INTERMEDIATE SEMICONDUCTOR LAYERS ON CARRIER TRANSPORT MECHANISMS THROUGH P-ZNSE METALS INTERFACES/, Journal of electronic materials, 27(8), 1998, pp. 998-1002
Authors:
KOIDE Y
KAWAKAMI T
MURAKAMI M
TERAGUCHI N
TOMOMURA Y
SUZUKI A
Citation: Y. Koide et al., SCHOTTKY-BARRIER HEIGHTS OF CONTACT METALS TO P-TYPE ZNSE, Journal of electronic materials, 27(6), 1998, pp. 772-775
Authors:
KOIDE Y
KAWAKAMI T
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: Y. Koide et al., SCHOTTKY-BARRIER HEIGHTS OF METALS CONTACTING TO P-ZNSE, Journal of applied physics, 82(5), 1997, pp. 2393-2399
Authors:
TADANAGA O
KOIDE Y
HASHIMOTO K
OKU T
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: O. Tadanaga et al., DEPENDENCE OF ELECTRICAL-PROPERTIES ON WORK-FUNCTIONS OF METALS CONTACTING TO P-TYPE ZNSE, JPN J A P 1, 35(3), 1996, pp. 1657-1663
Authors:
ISHIKAWA H
TSUKUI K
KOIDE Y
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: H. Ishikawa et al., EFFECTS OF SURFACE CLEANING ON ELECTRICAL-PROPERTIES FOR NI CONTACTS TO P-TYPE ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1812-1818
Authors:
HASHIMOTO K
KOIDE Y
TADANAGA O
OKU T
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: K. Hashimoto et al., CD AND TE-BASED OHMIC CONTACT MATERIALS TO P-TYPE ZNSE, Journal of electronic materials, 25(12), 1996, pp. 1823-1831
Authors:
TERAGUCHI N
MOURI H
TOMOMURA Y
SUZUKI A
RORISON J
DUGGAN G
Citation: N. Teraguchi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF NEW CARRIER BARRIER LAYER STRUCTURE OF II-VI COMPOUNDS, Journal of crystal growth, 159(1-4), 1996, pp. 493-497
Authors:
KOIDE Y
HASHIMOTO K
ISHIKAWA H
TSUKUI K
OKU T
MURAKAMI M
TERAGUCHI N
TOMOMURA Y
SUZUKI A
Citation: Y. Koide et al., CD-BASED OHMIC CONTACT MATERIALS TO P-ZNSE, Journal of crystal growth, 159(1-4), 1996, pp. 709-713
Authors:
TERAGUCHI N
HIRATA S
MOURI H
TOMOMURA Y
SUZUKI A
TAKIGUCHI H
Citation: N. Teraguchi et al., GROWTH AND CHARACTERIZATION OF N-DOPED ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-0.3) BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 803-806
Authors:
TERAGUCHI N
MOURI H
TOMOMURA Y
TANIGUCHI H
RORISON J
DUGGAN G
Citation: N. Teraguchi et al., GROWTH OF ZNSE MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(20), 1995, pp. 2945-2947
STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE
Authors:
STRITE S
CHANDRASEKHAR D
SMITH DJ
SARIEL J
CHEN H
TERAGUCHI N
MORKOC H
Citation: S. Strite et al., STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE, Journal of crystal growth, 127(1-4), 1993, pp. 204-208
Authors:
SVERDLOV BN
BOTCHKAREV AE
TERAGUCHI N
SALVADOR AA
MORKOC H
Citation: Bn. Sverdlov et al., REDUCTION OF DARK CURRENT IN PHOTODIODES BY THE USE OF A RESONANT-CAVITY, Electronics Letters, 29(11), 1993, pp. 1019-1021
Authors:
HUANG FY
SALVADOR A
GUI X
TERAGUCHI N
MORKOC H
Citation: Fy. Huang et al., RESONANT-CAVITY GAAS INGAAS/ALAS PHOTODIODES WITH A PERIODIC ABSORBERSTRUCTURE/, Applied physics letters, 63(2), 1993, pp. 141-143
Authors:
MUI DSL
WANG Z
BISWAS D
DEMIREL AL
TERAGUCHI N
REED J
MORKOC H
Citation: Dsl. Mui et al., SI3N4 SI/IN0.53GA0.47AS DEPLETION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH IMPROVED STABILITY/, Applied physics letters, 62(25), 1993, pp. 3291-3293
Authors:
WANG Z
LIN ME
BISWAS D
MAZHARI B
TERAGUCHI N
FAN Z
GUI X
MORKOC H
Citation: Z. Wang et al., SI3N4 SI/N-GAAS CAPACITOR WITH MINIMUM INTERFACE DENSITY IN THE 10(10) EV(-1) CM(-2) RANGE/, Applied physics letters, 62(23), 1993, pp. 2977-2979
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1-16
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