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Results:
1-18
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Results: 18
Authors:
ALPEROVICH VL
MOSHEGOV NT
POPOV VV
TEREKHOV AS
TKACHENKO VA
TOROPOV AI
YAROSHEVICH AS
Citation: Vl. Alperovich et al., DETERMINATION OF THE ROUGHNESS OF HETEROBOUNDARIES FROM PHOTOCURRENT SPECTRA OF SHORT-PERIOD ALAS GAAS SUPERLATTICES/, Physics of the solid state, 39(11), 1997, pp. 1864-1868
Authors:
ALPEROVICH VL
BOLKHOVITYANOV YB
JAROSHEVICH AS
KATKOV AV
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Vl. Alperovich et al., SHIFTS AND SPLITTING OF ENERGY-BANDS IN ELASTICALLY STRAINED INGAP GAAS(111)B EPITAXIAL-FILMS/, Journal of applied physics, 82(3), 1997, pp. 1214-1219
Authors:
PASTUSZKA S
KRATZMANN D
SCHWALM D
WOLF A
TEREKHOV AS
Citation: S. Pastuszka et al., TRANSVERSE ENERGY SPREAD OF PHOTOELECTRONS EMITTED FROM GAAS PHOTOCATHODES WITH NEGATIVE ELECTRON-AFFINITY, Applied physics letters, 71(20), 1997, pp. 2967-2969
Authors:
ALPEROVICH VL
JAROSHEVICH AS
SCHEIBLER HE
TEREKHOV AS
TOBER RL
Citation: Vl. Alperovich et al., FOURIER-TRANSFORM ANALYSIS OF ELECTROMODULATION SPECTRA - EFFECTS OF THE MODULATION AMPLITUDE, Applied physics letters, 71(19), 1997, pp. 2788-2790
Authors:
TEREKHOV AS
ORLOV DA
YAROSHEVICH AS
SOLDATCHENKO GM
SAVCHENKO IV
RONZHIN LS
Citation: As. Terekhov et al., EFFECT OF MIRROR IMAGING POWER ON THE ELE CTRON PHOTOEMISSION FROM GAAS WITH NEGATIVE ELECTRON-AFFINITY, Fizika tverdogo tela, 38(1), 1996, pp. 306-309
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Yb. Bolkhovityanov et al., SHEAR DEFORMATION POTENTIAL OF ELASTICALLY STRAINED INGAP GAAS(111)B AND INGAASP/GAAS(111)B FILMS/, Semiconductor science and technology, 11(12), 1996, pp. 1847-1849
Authors:
PASTUSZKA S
TEREKHOV AS
WOLF A
Citation: S. Pastuszka et al., STABLE TO UNSTABLE TRANSITION IN THE (CS,O) ACTIVATION LAYER ON GAAS(100) SURFACES WITH NEGATIVE ELECTRON-AFFINITY IN EXTREMELY HIGH-VACUUM, Applied surface science, 99(4), 1996, pp. 361-365
Authors:
ALPEROVICH VL
PAULISH AG
SCHEIBLER HE
TYNNYI VI
TEREKHOV AS
Citation: Vl. Alperovich et al., UNPINNED BEHAVIOR OF THE FERMI-LEVEL AND PHOTOVOLTAGE ON P-(100)GAAS SURFACE FACILITATED BY DEPOSITION OF CESIUM, Applied surface science, 104, 1996, pp. 228-233
Authors:
DRESCHER P
PLUTZER S
REICHERT E
SCHEMIES M
ALPEROVICH VL
BOLKHOVITYANOV YB
JAROSHEVICH AS
PAULISH AG
SCHEIBLER HE
TEREKHOV AS
Citation: P. Drescher et al., EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 169-173
Authors:
ALPEROVICH VL
KUZAEV VN
TEREKHOV AS
SHEVELEV SV
Citation: Vl. Alperovich et al., STUDY OF REVERSED ZONE MODIFICATIONS ON P -GAAS(CS,O) SURFACE AT ROOM-TEMPERATURE BY THE X-RAY PHOTOELECTRON-SPECTROSCOPY TECHNIQUE, Fizika tverdogo tela, 37(2), 1995, pp. 344-350
Authors:
ALPEROVICH VL
PAULISH AG
TEREKHOV AS
Citation: Vl. Alperovich et al., UNPINNED BEHAVIOR OF THE ELECTRONIC-PROPERTIES OF A P-GAAS(CS,O) SURFACE AT ROOM-TEMPERATURE, Surface science, 333, 1995, pp. 1250-1255
Authors:
SCHEIBLER HE
ALPEROVICH VL
JAROSHEVICH AS
TEREKHOV AS
Citation: He. Scheibler et al., FOURIER RESOLUTION OF SURFACE AND INTERFACE CONTRIBUTIONS TO PHOTOREFLECTANCE SPECTRA OF MULTILAYERED STRUCTURES, Physica status solidi. a, Applied research, 152(1), 1995, pp. 113-122
Authors:
BOLKHOVITYANOV YB
ALPEROVICH VL
JAROSHEVICH AS
NOMEROTSKY NV
PAULISH AG
TEREKHOV AS
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313
Authors:
GILINSKY AM
MOLODTSOV RV
TEREKHOV AS
FEDOTOV MG
Citation: Am. Gilinsky et al., A FACILITY FOR MAPPING PHOTOLUMINESCENCE FROM SEMICONDUCTOR HETEROSTRUCTURES WITH SPECTRAL RESOLUTION, Instruments and experimental techniques, 38(1), 1995, pp. 100-102
Authors:
ALPEROVICH VL
PAULISH AG
SCHEIBLER HE
TEREKHOV AS
Citation: Vl. Alperovich et al., EVOLUTION OF ELECTRONIC-PROPERTIES AT THE P-GAAS(CS,O) SURFACE DURINGNEGATIVE ELECTRON-AFFINITY STATE FORMATION, Applied physics letters, 66(16), 1995, pp. 2122-2124
NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE
Authors:
ALPEROVICH VL
BOLKHOVITYANOV YB
PAULISH AG
TEREKHOV AS
Citation: Vl. Alperovich et al., NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 340(3), 1994, pp. 429-435
Authors:
ALPEROVICH VL
PAULISH AG
TEREKHOV AS
Citation: Vl. Alperovich et al., DOMINATION OF ADATOM-INDUCED OVER DEFECT-INDUCED SURFACE-STATES ON P-TYPE GAAS(CS,O) AT ROOM-TEMPERATURE, Physical review. B, Condensed matter, 50(8), 1994, pp. 5480-5483
Authors:
TEREKHOV AS
ORLOV DA
Citation: As. Terekhov et Da. Orlov, FINE-STRUCTURE IN THE SPECTRA OF THERMALIZED PHOTOELECTRONS EMITTED FROM GAAS WITH A NEGATIVE ELECTRON-AFFINITY, JETP letters, 59(12), 1994, pp. 864-868
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