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Citation: Jw. Thackeray, STATUS AND FUTURE OF DUV PHOTORESISTS FOR THE SEMICONDUCTOR INDUSTRY, Microelectronic engineering, 42, 1998, pp. 37-40

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Citation: T. Lindsay et al., A NEW POSITIVE DUV PHOTORESIST OPTIMIZED FOR 0.25-MU-M ISOLATED LINES, Microelectronic engineering, 35(1-4), 1997, pp. 109-112

Authors: FEDYNYSHYN TH THACKERAY JW GEORGER JH DENISON MD

Citation: Th. Fedynyshyn et al., EFFECT OF ACID DIFFUSION ON PERFORMANCE IN POSITIVE DEEP-ULTRAVIOLET RESISTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3888-3894

Authors: FEDYNYSHYN TH THACKERAY JW MORI JM

Citation: Th. Fedynyshyn et al., THE EFFECT OF DIFFUSION, REACTION ORDER, AND DEVELOPER SELECTIVITY ONTHE PERFORMANCE OF POSITIVE DUV RESISTS, Microelectronic engineering, 23(1-4), 1994, pp. 315-320

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Citation: Jw. Thackeray et al., DISSOLUTION RATE PROPERTIES OF 3-COMPONENT DEEP-ULTRAVIOLET POSITIVE PHOTORESISTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2855-2861