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Results:
1-8
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Results: 8
Authors:
BOSKER G
STOLWIJK NA
THORDSON JV
SODERVALL U
ANDERSSON TG
Citation: G. Bosker et al., DIFFUSION OF NITROGEN FROM A BURIED DOPING LAYER IN GALLIUM-ARSENIDE REVEALING THE PROMINENT ROLE OF AS INTERSTITIALS, Physical review letters, 81(16), 1998, pp. 3443-3446
Authors:
POZINA G
IVANOV I
MONEMAR B
THORDSON JV
ANDERSSON TG
Citation: G. Pozina et al., PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN GANAS FROM OPTICAL SPECTROSCOPY, Journal of applied physics, 84(7), 1998, pp. 3830-3835
Authors:
THORDSON JV
ANDERSSON TG
SWENSON G
SODERVALL U
Citation: Jv. Thordson et al., 2-DIMENSIONAL LIMITATIONS WHEN INCREASING THE SI-CONCENTRATION FROM DELTA-DOPING TO THIN SI-LAYERS IN GAAS, Journal of crystal growth, 175, 1997, pp. 234-237
Authors:
NILSSON PO
KANSKI J
THORDSON JV
ANDERSSON TG
NORDGREN J
GUO J
MAGNUSON M
Citation: Po. Nilsson et al., ELECTRONIC-STRUCTURE OF BURIED SI LAYERS IN GAAS(001) AS STUDIED BY SOFT-X-RAY EMISSION, Physical review. B, Condensed matter, 52(12), 1995, pp. 8643-8645
Authors:
THORDSON JV
SONGPONGS P
SWENSON G
ANDERSSON TG
Citation: Jv. Thordson et al., GROWTH AND CHARACTERIZATION OF GAAS SI/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 696-699
Authors:
WANG SM
ANDERSSON TG
LAI ZH
THORDSON JV
Citation: Sm. Wang et al., STRAIN RECOVERY IN PARTIALLY RELAXED IN0.2GA0.8AS GAAS SINGLE QUANTUM-WELLS WITH INCREASING GAAS CAP LAYER THICKNESS/, Semiconductor science and technology, 9(6), 1994, pp. 1230-1233
Authors:
WANG SM
THORDSON JV
ANDERSSON TG
JIANG S
YANG LX
SHEN SC
Citation: Sm. Wang et al., INFLUENCE OF CAP LAYER THICKNESS ON OPTICAL-QUALITY IN IN0.2GA0.8AS GAAS SINGLE QUANTUM-WELLS/, Applied physics letters, 65(3), 1994, pp. 336-337
Authors:
HSU CC
XU JB
WILSON IH
ANDERSSON TG
THORDSON JV
Citation: Cc. Hsu et al., SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(12), 1994, pp. 1552-1554
Risultati:
1-8
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