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Results: 1-11 |
Results: 11
DOPING PROFILES FOR INDIUM-ANTIMONIDE MAGNETORESISTORS
Authors: PARTIN DL HEREMANS J THRUSH CM
Citation: Dl. Partin et al., DOPING PROFILES FOR INDIUM-ANTIMONIDE MAGNETORESISTORS, Sensors and actuators. A, Physical, 69(1), 1998, pp. 39-45
TEMPERATURE-DEPENDENCE OF RELAXATION-TIMES IN ELECTRON FOCUSING AND ANTIDOT STRUCTURES MADE FROM IN0.53GA0.47AS INP HETEROJUNCTIONS/
Authors: HEREMANS J FULLER BK THRUSH CM BAYOT V
Citation: J. Heremans et al., TEMPERATURE-DEPENDENCE OF RELAXATION-TIMES IN ELECTRON FOCUSING AND ANTIDOT STRUCTURES MADE FROM IN0.53GA0.47AS INP HETEROJUNCTIONS/, Superlattices and microstructures, 24(4), 1998, pp. 263-267
MAGNETORESISTANCE OF BISMUTH NANOWIRE ARRAYS - A POSSIBLE TRANSITION FROM ONE-DIMENSIONAL TO 3-DIMENSIONAL LOCALIZATION
Authors: HEREMANS J THRUSH CM ZHANG Z SUN X DRESSELHAUS MS YING JY MORELLI DT
Citation: J. Heremans et al., MAGNETORESISTANCE OF BISMUTH NANOWIRE ARRAYS - A POSSIBLE TRANSITION FROM ONE-DIMENSIONAL TO 3-DIMENSIONAL LOCALIZATION, Physical review. B, Condensed matter, 58(16), 1998, pp. 10091-10095
NEGATIVE MAGNETORESISTANCE IN (INSB)(1-X)Y-X AT LOW-TEMPERATURE
Authors: YANG J HEREMANS J PARTIN DL THRUSH CM NAIK R
Citation: J. Yang et al., NEGATIVE MAGNETORESISTANCE IN (INSB)(1-X)Y-X AT LOW-TEMPERATURE, Journal of applied physics, 83(4), 1998, pp. 2041-2045
GROWTH OF TIN-DOPED INDIUM-ANTIMONIDE FOR MAGNETORESISTORS
Authors: PARTIN DL GREEN L HEREMANS J THRUSH CM
Citation: Dl. Partin et al., GROWTH OF TIN-DOPED INDIUM-ANTIMONIDE FOR MAGNETORESISTORS, Journal of electronic materials, 26(10), 1997, pp. 1237-1243
INDIUM-ANTIMONIDE DOPED WITH MANGANESE GROWN BY MOLECULAR-BEAM EPITAXY
Authors: PARTIN DL HEREMANS J THRUSH CM
Citation: Dl. Partin et al., INDIUM-ANTIMONIDE DOPED WITH MANGANESE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 860-867
AN INVESTIGATION OF THE MULTICARRIER TRANSPORT-PROPERTIES OF DELTA-DOPED INSB AT HIGH-TEMPERATURES USING A MOBILITY SPECTRUM TECHNIQUE
Authors: PANAEV IA STUDENIKIN SA TKACHENKO VA TKACHENKO OA HEREMANS JP PARTIN DL MORELLI DT THRUSH CM
Citation: Ia. Panaev et al., AN INVESTIGATION OF THE MULTICARRIER TRANSPORT-PROPERTIES OF DELTA-DOPED INSB AT HIGH-TEMPERATURES USING A MOBILITY SPECTRUM TECHNIQUE, Semiconductor science and technology, 11(12), 1996, pp. 1857-1862
TEMPERATURE-DEPENDENCE OF THE MAGNETORESISTANCE OF INXGA1-XAS ANTIDOTLATTICES
Authors: HEREMANS J FULLER BK THRUSH CM BAYOT V
Citation: J. Heremans et al., TEMPERATURE-DEPENDENCE OF THE MAGNETORESISTANCE OF INXGA1-XAS ANTIDOTLATTICES, Physical review. B, Condensed matter, 54(4), 1996, pp. 2685-2690
TEMPERATURE-DEPENDENCE OF ELECTRON FOCUSING IN IN1-XGAXAS INP HETEROJUNCTIONS/
Authors: HEREMANS J FULLER BK THRUSH CM PARTIN DL
Citation: J. Heremans et al., TEMPERATURE-DEPENDENCE OF ELECTRON FOCUSING IN IN1-XGAXAS INP HETEROJUNCTIONS/, Physical review. B, Condensed matter, 52(8), 1995, pp. 5767-5772
CYCLOTRON-RESONANCE IN EPITAXIAL BI1-XSBX FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: HEREMANS J PARTIN DL THRUSH CM KARCZEWSKI G RICHARDSON MS FURDYNA JK
Citation: J. Heremans et al., CYCLOTRON-RESONANCE IN EPITAXIAL BI1-XSBX FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 48(15), 1993, pp. 11329-11335
MAGNETOTRANSPORT AND MAGNETOOPTICAL PROPERTIES OF DELTA-DOPED INSB
Authors: HEREMANS J PARTIN DL MORELLI DT THRUSH CM KARCZEWSKI G FURDYNA JK
Citation: J. Heremans et al., MAGNETOTRANSPORT AND MAGNETOOPTICAL PROPERTIES OF DELTA-DOPED INSB, Journal of applied physics, 74(3), 1993, pp. 1793-1798
Risultati: 1-11 |