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Results: 1-10 |
Results: 10
SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY
Authors: HOLMES DM TOK ES SUDIJONO JL JONES TS JOYCE BA
Citation: Dm. Holmes et al., SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY, Journal of crystal growth, 192(1-2), 1998, pp. 33-46
GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC
Authors: TOK ES NEAVE JH ASHWIN MJ JOYCE BA JONES TS
Citation: Es. Tok et al., GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC, Journal of applied physics, 83(8), 1998, pp. 4160-4167
ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES
Authors: GARDNER NR WOODS NJ DOMINGUEZ PS TOK ES NORMAN CE HARRIS JJ
Citation: Nr. Gardner et al., ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES, Semiconductor science and technology, 12(6), 1997, pp. 737-741
MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES
Authors: FAHY MR ZHANG XM TOK ES NEAVE JH VACCARO P FUJITA K TAKAHASHI M WATANABE T SATO K JOYCE BA
Citation: Mr. Fahy et al., MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES, Thin solid films, 306(2), 1997, pp. 192-197
AN STM STUDY OF THE NATURE OF THE TRANSITIONAL PHASE OF THE GAAS(111)B SURFACE
Authors: AVERY AR TOK ES JONES TS
Citation: Ar. Avery et al., AN STM STUDY OF THE NATURE OF THE TRANSITIONAL PHASE OF THE GAAS(111)B SURFACE, Surface science, 376(1-3), 1997, pp. 397-402
ARSENIC INCORPORATION KINETICS IN GAAS(001) HOMOEPITAXY REVISITED
Authors: TOK ES NEAVE JH ZHANG J JOYCE BA JONES TS
Citation: Es. Tok et al., ARSENIC INCORPORATION KINETICS IN GAAS(001) HOMOEPITAXY REVISITED, Surface science, 374(1-3), 1997, pp. 397-405
INCORPORATION KINETICS OF AS-2 AND AS-4 ON GAAS(110)
Authors: TOK ES NEAVE JH ALLEGRETTI FE ZHANG J JONES TS JOYCE BA
Citation: Es. Tok et al., INCORPORATION KINETICS OF AS-2 AND AS-4 ON GAAS(110), Surface science, 371(2-3), 1997, pp. 277-288
INFLUENCE OF ARSENIC INCORPORATION ON SURFACE-MORPHOLOGY AND SI DOPING IN GAAS(110) HOMOEPITAXY
Authors: TOK ES NEAVE JH FAHY MR ALLEGRETTI FE ZHANG J JONES TS JOYCE BA
Citation: Es. Tok et al., INFLUENCE OF ARSENIC INCORPORATION ON SURFACE-MORPHOLOGY AND SI DOPING IN GAAS(110) HOMOEPITAXY, Microelectronics, 28(8-10), 1997, pp. 833-839
IS THE ARSENIC INCORPORATION KINETICS IMPORTANT WHEN GROWING GAAS(001), GAAS(110), AND GAAS(111)A FILMS
Authors: TOK ES JONES TS NEAVE JH ZHANG J JOYCE BA
Citation: Es. Tok et al., IS THE ARSENIC INCORPORATION KINETICS IMPORTANT WHEN GROWING GAAS(001), GAAS(110), AND GAAS(111)A FILMS, Applied physics letters, 71(22), 1997, pp. 3278-3280
GROWTH OF POLY(METHYL METHACRYLATE) PARTICLES IN 3-COMPONENT CATIONICMICROEMULSIONS
Authors: GAN LM LEE KC CHEW CH TOK ES NG SC
Citation: Lm. Gan et al., GROWTH OF POLY(METHYL METHACRYLATE) PARTICLES IN 3-COMPONENT CATIONICMICROEMULSIONS, Journal of polymer science. Part A, Polymer chemistry, 33(7), 1995, pp. 1161-1168
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