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Results: 1-25 | 26-34
Results: 1-25/34
SEMICONDUCTOR WAFER BONDING
Authors: GOSELE U TONG QY
Citation: U. Gosele et Qy. Tong, SEMICONDUCTOR WAFER BONDING, Annual review of materials science, 28, 1998, pp. 215-241
SI AND SIC LAYER TRANSFER BY HIGH-TEMPERATURE HYDROGEN IMPLANTATION AND LOWER TEMPERATURE LAYER SPLITTING
Authors: TONG QY LEE TH HUANG LJ CHAO YL GOSELE U
Citation: Qy. Tong et al., SI AND SIC LAYER TRANSFER BY HIGH-TEMPERATURE HYDROGEN IMPLANTATION AND LOWER TEMPERATURE LAYER SPLITTING, Electronics Letters, 34(4), 1998, pp. 407-408
A SMARTER-CUT APPROACH TO LOW-TEMPERATURE SILICON LAYER TRANSFER
Authors: TONG QY SCHOLZ R GOSELE U LEE TH HUANG LJ CHAO YL TAN TY
Citation: Qy. Tong et al., A SMARTER-CUT APPROACH TO LOW-TEMPERATURE SILICON LAYER TRANSFER, Applied physics letters, 72(1), 1998, pp. 49-51
FABRICATION OF DOUBLE-SIDED YBA2CU3O7 THIN-FILMS ON 2 INCH DIAMETER LAALO3 WAFERS BY DIRECT WAFER BONDING
Authors: EOM CB HUANG L RAO RA TONG QY GOSELE U
Citation: Cb. Eom et al., FABRICATION OF DOUBLE-SIDED YBA2CU3O7 THIN-FILMS ON 2 INCH DIAMETER LAALO3 WAFERS BY DIRECT WAFER BONDING, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 1244-1248
CREATING GENERIC ANATOMIC MODELS FROM MULTIPLE CT SCANS
Authors: TONG QY WOOD S DUPRE A BARR RE
Citation: Qy. Tong et al., CREATING GENERIC ANATOMIC MODELS FROM MULTIPLE CT SCANS, The FASEB journal, 11(3), 1997, pp. 3588-3588
CHARACTERIZATION OF BURIED INTERFACES BY MULTIPLE INTERNAL-REFLECTIONSPECTROSCOPY (MIRS)
Authors: REICHE M HOPFE S GOSELE U TONG QY
Citation: M. Reiche et al., CHARACTERIZATION OF BURIED INTERFACES BY MULTIPLE INTERNAL-REFLECTIONSPECTROSCOPY (MIRS), Mikrochimica acta, 125(1-4), 1997, pp. 367-373
GROWTH OF BURIED OXIDE LAYERS OF SILICON-ON-INSULATOR STRUCTURES BY THERMAL-OXIDATION OF THE TOP SILICON LAYER
Authors: SCHROER E HOPFE S TONG QY GOSELE U SKORUPA W
Citation: E. Schroer et al., GROWTH OF BURIED OXIDE LAYERS OF SILICON-ON-INSULATOR STRUCTURES BY THERMAL-OXIDATION OF THE TOP SILICON LAYER, Journal of the Electrochemical Society, 144(6), 1997, pp. 2205-2210
FABRICATION OF SINGLE-CRYSTALLINE SIC LAYER ON HIGH-TEMPERATURE GLASS
Authors: TONG QY LEE TH WERNER P GOSELE U BERGMANN RB WERNER JH
Citation: Qy. Tong et al., FABRICATION OF SINGLE-CRYSTALLINE SIC LAYER ON HIGH-TEMPERATURE GLASS, Journal of the Electrochemical Society, 144(5), 1997, pp. 111-113
THE ROLE OF SURFACE-CHEMISTRY IN BONDING OF STANDARD SILICON-WAFERS
Authors: TONG QY LEE TH GOSELE U REICHE M RAMM J BECK E
Citation: Qy. Tong et al., THE ROLE OF SURFACE-CHEMISTRY IN BONDING OF STANDARD SILICON-WAFERS, Journal of the Electrochemical Society, 144(1), 1997, pp. 384-389
LAYER SPLITTING PROCESS IN HYDROGEN-IMPLANTED SI, GE, SIC, AND DIAMOND SUBSTRATES
Authors: TONG QY GUTJAHR K HOPFE S GOSELE U LEE TH
Citation: Qy. Tong et al., LAYER SPLITTING PROCESS IN HYDROGEN-IMPLANTED SI, GE, SIC, AND DIAMOND SUBSTRATES, Applied physics letters, 70(11), 1997, pp. 1390-1392
A NOTE ON ANALYZING SCHIZOPHRENIC EEG WITH COMPLEXITY MEASURE
Authors: TONG QY KONG J XU JH
Citation: Qy. Tong et al., A NOTE ON ANALYZING SCHIZOPHRENIC EEG WITH COMPLEXITY MEASURE, Chaos, solitons and fractals, 7(3), 1996, pp. 371-375
EFFECT OF 2 TYPES OF SURFACE SITES ON THE CHARACTERISTICS OF SI3N4-GATE PH-ISFETS
Authors: NIU MN DING XF TONG QY
Citation: Mn. Niu et al., EFFECT OF 2 TYPES OF SURFACE SITES ON THE CHARACTERISTICS OF SI3N4-GATE PH-ISFETS, Sensors and actuators. B, Chemical, 37(1-2), 1996, pp. 13-17
A FLEXIBLE BUILT-IN GETTERING LAYER PREPARED BY HYDROPHOBIC SI WAFER BONDING
Authors: TONG QY HSIA S GOSELE U ZIMMERMANN H REICHE M
Citation: Qy. Tong et al., A FLEXIBLE BUILT-IN GETTERING LAYER PREPARED BY HYDROPHOBIC SI WAFER BONDING, Materials chemistry and physics, 45(3), 1996, pp. 223-227
ANALYTICAL PIEZOELECTRIC CHARGE-DENSITIES IN GAAS MESFETS (VOL 43, PG509, 1996)
Authors: HUANG QA TONG QY
Citation: Qa. Huang et Qy. Tong, ANALYTICAL PIEZOELECTRIC CHARGE-DENSITIES IN GAAS MESFETS (VOL 43, PG509, 1996), I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1477-1477
ANALYTICAL PIEZOELECTRIC CHARGE-DENSITIES IN GAAS-MESFETS
Authors: HUANG QA TONG QY
Citation: Qa. Huang et Qy. Tong, ANALYTICAL PIEZOELECTRIC CHARGE-DENSITIES IN GAAS-MESFETS, I.E.E.E. transactions on electron devices, 43(3), 1996, pp. 509-510
A MODEL OF LOW-TEMPERATURE WAFER BONDING AND ITS APPLICATIONS
Authors: TONG QY GOSELE U
Citation: Qy. Tong et U. Gosele, A MODEL OF LOW-TEMPERATURE WAFER BONDING AND ITS APPLICATIONS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1773-1779
A NOVEL SURFACE-SITE MODEL FOR THE OXIDE AQUEOUS-ELECTROLYTE INTERFACE
Authors: NIU MN TENG ZM XIANG T DING XF TONG QY
Citation: Mn. Niu et al., A NOVEL SURFACE-SITE MODEL FOR THE OXIDE AQUEOUS-ELECTROLYTE INTERFACE, JPN J A P 1, 34(12A), 1995, pp. 6372-6374
MULTIPLE INTERNAL-REFLECTION SPECTROSCOPY OF BONDED SILICON-WAFERS
Authors: REICHE M HOPFE S GOSELE U TONG QY
Citation: M. Reiche et al., MULTIPLE INTERNAL-REFLECTION SPECTROSCOPY OF BONDED SILICON-WAFERS, Applied physics A: Materials science & processing, 61(2), 1995, pp. 101-105
ULTRATHIN SINGLE-CRYSTALLINE SILICON ON QUARTZ (SOQ) BY 150-DEGREES-CWAFER BONDING
Authors: TONG QY GOSELE U MARTINI T REICHE M
Citation: Qy. Tong et al., ULTRATHIN SINGLE-CRYSTALLINE SILICON ON QUARTZ (SOQ) BY 150-DEGREES-CWAFER BONDING, Sensors and actuators. A, Physical, 48(2), 1995, pp. 117-123
PROPERTIES OF SIMOX AND BONDED SOI MATERIAL
Authors: GOSELE U REICHE M TONG QY
Citation: U. Gosele et al., PROPERTIES OF SIMOX AND BONDED SOI MATERIAL, Microelectronic engineering, 28(1-4), 1995, pp. 391-397
THICKNESS CONSIDERATIONS IN DIRECT SILICON-WAFER BONDING
Authors: TONG QY GOSELE U
Citation: Qy. Tong et U. Gosele, THICKNESS CONSIDERATIONS IN DIRECT SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(11), 1995, pp. 3975-3979
A SIMPLE CHEMICAL TREATMENT FOR PREVENTING THERMAL BUBBLES IN SILICON-WAFER BONDING
Authors: TONG QY KAIDO G TONG L REICHE M SHI F STEINKIRCHNER J TAN TY GOSELE U
Citation: Qy. Tong et al., A SIMPLE CHEMICAL TREATMENT FOR PREVENTING THERMAL BUBBLES IN SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(10), 1995, pp. 201-203
SILICON-CARBIDE WAFER BONDING
Authors: TONG QY GOSELE U YUAN C STECKL AJ REICHE M
Citation: Qy. Tong et al., SILICON-CARBIDE WAFER BONDING, Journal of the Electrochemical Society, 142(1), 1995, pp. 232-236
WHAT DETERMINES THE LATERAL BONDING SPEED IN SILICON-WAFER BONDING
Authors: GOSELE U HOPFE S LI S MACK S MARTINI T REICHE M SCHMIDT E STENZEL H TONG QY
Citation: U. Gosele et al., WHAT DETERMINES THE LATERAL BONDING SPEED IN SILICON-WAFER BONDING, Applied physics letters, 67(6), 1995, pp. 863-865
BIASED-VOLTAGE CONTROLLED THINNING FOR BONDED SILICON-ON-INSULATOR WAFERS
Authors: HUANG QA CHEN JN FU XH ZHANG HZ TONG QY
Citation: Qa. Huang et al., BIASED-VOLTAGE CONTROLLED THINNING FOR BONDED SILICON-ON-INSULATOR WAFERS, Applied physics letters, 66(22), 1995, pp. 2990-2991
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