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Results: 1-25/26
Authors:
FERGUSON I
TRAN CA
KARLICEK RF
FENG ZC
STALL R
LIANG S
LU Y
JOSEPH C
Citation: I. Ferguson et al., GAN AND ALGAN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 311-314
Authors:
TRAN CA
ARES RA
KARASYUK VA
WATKINS SP
LETOURNEAU G
LEONELLI R
Citation: Ca. Tran et al., ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS, Physical review. B, Condensed matter, 55(7), 1997, pp. 4633-4638
Authors:
TRAN CA
KARLICEK R
SCHURMAN M
SALAGAJ T
CASSIDY R
FERGUSON I
THOMPSON AG
STALL RA
HWANG CY
Citation: Ca. Tran et al., STRUCTURAL-PROPERTIES OF GAN GROWN BY MOVPE TURBODISC MASS-PRODUCTIONREACTOR, Journal of crystal growth, 174(1-4), 1997, pp. 647-652
Authors:
ARES R
WATKINS SP
TRAN CA
Citation: R. Ares et al., BREAKDOWN OF SELF-LIMITING BEHAVIOR IN INAS GAAS HETEROSTRUCTURES GROWN BY ATOMIC LAYER EPITAXY/, Journal of crystal growth, 170(1-4), 1997, pp. 574-578
Authors:
WATKINS SP
ARES R
SOERENSEN G
ZHONG W
TRAN CA
BRYCE JE
BOLOGNESI CR
Citation: Sp. Watkins et al., ATOMIC-FORCE MICROSCOPY STUDY OF MORPHOLOGY AND DISLOCATION-STRUCTUREOF INAS AND GASB GROWN ON HIGHLY MISMATCHED SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 788-793
Authors:
LACROIX Y
TRAN CA
WATKINS SP
THEWALT MLW
Citation: Y. Lacroix et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF EPITAXIAL INAS, Journal of applied physics, 80(11), 1996, pp. 6416-6424
Authors:
ARES R
TRAN CA
WATKINS SP
Citation: R. Ares et al., DETERMINATION OF GROWTH-PARAMETERS FOR ATOMIC LAYER EPITAXY USING REFLECTANCE DIFFERENCE SPECTROSCOPY, Canadian journal of physics, 74, 1996, pp. 85-88
Authors:
LACROIX Y
TRAN CA
WATKINS SP
THEWALT MLW
Citation: Y. Lacroix et al., OPTICAL-IDENTIFICATION OF THE EXCITON-POLARITON IN EPITAXIAL INAS, Canadian journal of physics, 74, 1996, pp. 212-215
Authors:
WATKINS SP
TRAN CA
SOERENSEN G
CHEUNG HD
ARES RA
LACROIX Y
THEWALT MLW
Citation: Sp. Watkins et al., CHARACTERIZATION OF VERY HIGH-PURITY INAS GROWN USING TRIMETHYLINDIUMAND TERTIARYBUTYLARSINE, Journal of electronic materials, 24(11), 1995, pp. 1583-1590
Authors:
TRAN CA
ARES R
WATKINS SP
SOERENSEN G
LACROIX Y
Citation: Ca. Tran et al., ATOMIC LAYER EPITAXY OF INAS USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(11), 1995, pp. 1597-1603
Authors:
ARES R
TRAN CA
WATKINS SP
Citation: R. Ares et al., IN-SITU OBSERVATION OF INDIUM SEGREGATION BY REFLECTANCE DIFFERENCE SPECTROSCOPY IN SINGLE MONOLAYER HETEROSTRUCTURES GROWN BY ATOMIC LAYEREPITAXY, Applied physics letters, 67(11), 1995, pp. 1576-1578
Authors:
LACROIX Y
WATKINS SP
TRAN CA
THEWALT MLW
Citation: Y. Lacroix et al., SHARP EXCITONIC PHOTOLUMINESCENCE FROM EPITAXIAL INAS, Applied physics letters, 66(9), 1995, pp. 1101-1103
Authors:
WATKINS SP
TRAN CA
ARES R
SOERENSEN G
Citation: Sp. Watkins et al., HIGH-MOBILITY INAS GROWN ON GAAS SUBSTRATES USING TERTIARYBUTYLARSINEAND TRIMETHYLINDIUM, Applied physics letters, 66(7), 1995, pp. 882-884
Authors:
TRAN CA
BREBNER JL
LEONELLI R
JOUANNE M
MASUT RA
Citation: Ca. Tran et al., E(1)-GAP RESONANT ENHANCEMENT OF THE RAMAN-SCATTERING FROM HIGHLY STRAINED INAS INP SHORT-PERIOD SUPERLATTICES, Superlattices and microstructures, 15(4), 1994, pp. 391-397
Authors:
TRAN CA
GRAHAM JT
BREBNER JL
MASUT RA
Citation: Ca. Tran et al., INTERFACES OF INASP INP MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 23(12), 1994, pp. 1291-1296
Authors:
TRAN CA
BREBNER JL
LEONELLI R
JOUANNE M
MASUT RA
Citation: Ca. Tran et al., OPTICAL PHONONS IN STRAINED SINGLE INAS INP QUANTUM-WELLS - A RAMAN-STUDY/, Physical review. B, Condensed matter, 49(16), 1994, pp. 11268-11271
Authors:
TRAN CA
MASUT RA
BREBNER JL
JOUANNE M
SALAMANCARIBA L
SHEN CC
SIEBER B
MIRI A
Citation: Ca. Tran et al., ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF INP AND INAS INP HETEROSTRUCTURES/, Journal of crystal growth, 145(1-4), 1994, pp. 332-337
Authors:
ZHAO YG
MASUT RA
BREBNER JL
TRAN CA
GRAHAM JT
Citation: Yg. Zhao et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN INASP INP STRAINED MULTIPLE-QUANTUM WELLS, Journal of applied physics, 76(10), 1994, pp. 5921-5926
Authors:
TRAN CA
MASUT RA
BREBNER JL
JOUANNE M
Citation: Ca. Tran et al., ATOMIC LAYER EPITAXY AND STRUCTURAL CHARACTERIZATION OF INP AND INAS INP HETEROSTRUCTURES/, Journal of applied physics, 75(5), 1994, pp. 2398-2405
Authors:
WATKINS SP
ARES R
MASUT RA
TRAN CA
BREBNER JL
Citation: Sp. Watkins et al., STRAIN EFFECTS IN HIGH-PURITY INP EPILAYERS GROWN ON SLIGHTLY MISMATCHED SUBSTRATES, Journal of applied physics, 75(5), 1994, pp. 2460-2465
Authors:
COVA P
MASUT RA
TRAN CA
BENSAADA A
CURRIE JF
Citation: P. Cova et al., COMBUSTION OF EFFLUENT GASES FROM A METAL-ORGANIC VAPOR-PHASE EPITAXYSYSTEM, Combustion science and technology, 97(1-3), 1994, pp. 1-11
Authors:
XING QJ
BREBNER JL
MASUT RA
AHMAD G
ZHAO G
TRAN CA
ISNARD L
Citation: Qj. Xing et al., STRAINED INAS INP QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 65(5), 1994, pp. 567-569
Authors:
LEONELLI R
TRAN CA
BREBNER JL
GRAHAM JT
TABTI R
MASUT RA
CHARBONNEAU S
Citation: R. Leonelli et al., OPTICAL AND STRUCTURAL-PROPERTIES OF METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN INAS QUANTUM-WELLS AND QUANTUM DOTS IN INP, Physical review. B, Condensed matter, 48(15), 1993, pp. 11135-11143
Authors:
TRAN CA
JOUANNE M
BREBNER JL
MASUT RA
Citation: Ca. Tran et al., EFFECT OF STRAIN ON CONFINED OPTIC PHONONS OF HIGHLY STRAINED INAS INP SUPERLATTICES/, Journal of applied physics, 74(8), 1993, pp. 4983-4989
Authors:
COVA P
MASUT RA
LACOURSIERE R
BENSAADA A
TRAN CA
CURRIE JF
Citation: P. Cova et al., REMOVAL OF METALLIC HYDRIDES FROM GASEOUS WASTES OF AN LP-MOVPE (LOW-PRESSURE METALLOORGANIC VAPOR-PRESSURE EPITAXY) REACTOR FOR THE GROWTHOF (IN, GA) (AS, P) COMPOUNDS, Canadian journal of physics, 71(7-8), 1993, pp. 307-315