Authors: ROSSEL P TRANDUC H CHARITAT G

Citation: P. Rossel et al., POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES, Microelectronics and reliability, 37(9), 1997, pp. 1375-1388

Authors: MORANCHO F ROSSEL P TRANDUC H

Citation: F. Morancho et al., STATIC AND DYNAMIC PROPERTIES OF LOW-VOLT AGE TRENCH POWER MOSFET OR UMOSFET, Journal de physique. III, 6(2), 1996, pp. 301-322

Authors: SANCHEZ JL TRANDUC H ROSSEL P CHARITAT G BEHRENS FH

Citation: Jl. Sanchez et al., SUBTHRESHOLD LATCH-UP IN MOS THYRISTOR AN D MCT DEVICES, Journal de physique. III, 5(1), 1995, pp. 11-32

Authors: BEYDOUN B ROSSEL P TRANDUC H CHARITAT G

Citation: B. Beydoun et al., PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED, Journal de physique. III, 4(8), 1994, pp. 1383-1396

Authors: KASSMI K ROSSEL P TRANDUC H OMS F

Citation: K. Kassmi et al., STUDY AND MODELING OF DYNAMIC PROPERTIES OF UHF POWER MOS-TRANSISTORS, Journal de physique. III, 4(3), 1994, pp. 503-529

Authors: BEYDOUN B TRANDUC H OMS F LAVIGNE AP ROSSEL P

Citation: B. Beydoun et al., DESIGN METHODOLOGY OF POWER MOSFET TRANSI STORS, Journal de physique. III, 4(10), 1994, pp. 1939-1955