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Authors: BERNHARD K ZRENNER A BOHM G TRANKLE G WEIMANN G
Citation: K. Bernhard et al., CHARGE-TRANSFER AND ELECTROABSORPTION IN AN ELECTRIC-FIELD TUNABLE DOUBLE-QUANTUM-WELL STRUCTURE, Solid-state electronics, 37(4-6), 1994, pp. 1307-1310

Authors: BRUNNER K ABSTREITER G BOHM G TRANKLE G WEIMANN G
Citation: K. Brunner et al., SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS ALGAAS STRUCTURE/, Physical review letters, 73(8), 1994, pp. 1138-1141

Authors: ROTHFRITZ H MULLER R BUCHEGGER C TRANKLE G WEIMANN G
Citation: H. Rothfritz et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF GAINAS(P) INP HETEROSTRUCTURES FOR LASER APPLICATIONS/, Journal of crystal growth, 136(1-4), 1994, pp. 225-229

Authors: GEIGER HW MULLER R BOHM G TRANKLE G WEIMANN G
Citation: Hw. Geiger et al., NOVEL FABRICATION-TOLERANT TWIN-GUIDE LASER STRUCTURE WITH AN EXTERNAL PASSIVE WAVE-GUIDE, Electronics Letters, 30(15), 1994, pp. 1232-1233

Authors: GODEL W MANUS S WHARAM DA KOTTHAUS JP BOHM G KLEIN W TRANKLE G WEIMANN G
Citation: W. Godel et al., BALLISTIC POINT CONTACTS AS MICROWAVE MIXERS, Electronics Letters, 30(12), 1994, pp. 977-979

Authors: BAUMGARTNER P BRUNNER K ABSTREITER G BOHM G TRANKLE G WEIMANN G
Citation: P. Baumgartner et al., FABRICATION OF IN-PLANE-GATE TRANSISTOR STRUCTURES BY FOCUSED LASER BEAM-INDUCED ZN DOPING OF MODULATION-DOPED GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 64(5), 1994, pp. 592-594

Authors: SCHMELLER A HANSEN W KOTTHAUS JP TRANKLE G WEIMANN G
Citation: A. Schmeller et al., FRANZ-KELDYSH EFFECT IN A 2-DIMENSIONAL SYSTEM, Applied physics letters, 64(3), 1994, pp. 330-332

Authors: BRUNNER K ABSTREITER G BOHM G TRANKLE G WEIMANN G
Citation: K. Brunner et al., SHARP-LINE PHOTOLUMINESCENCE OF EXCITONS LOCALIZED AT GAAS ALGAAS QUANTUM-WELL INHOMOGENEITIES/, Applied physics letters, 64(24), 1994, pp. 3320-3322

Authors: BRUNNER K BOCKELMANN U ABSTREITER G WALTHER M BOHM G TRANKLE G WEIMANN G
Citation: K. Brunner et al., PHOTOLUMINESCENCE FROM GAAS ALGAAS QUANTUM WIRES AND QUANTUM DOTS/, Journal de physique. IV, 3(C5), 1993, pp. 107-114

Authors: ROHR T WALTHER M ROCHUS S BOHM G KLEIN W TRANKLE G WEIMANN G
Citation: T. Rohr et al., MBE REGROWTH OF GAAS ALGAAS STRUCTURES ON RIE PATTERNED SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 153-156

Authors: HIRLER F STRENZ R KUCHLER R ABSTREITER G BOHM G SMOLINER J TRANKLE G WEIMANN G
Citation: F. Hirler et al., SPATIALLY DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN SHALLOW ETCHED GAAS ALGAAS WIRES, DOTS AND ANTIDOTS/, Semiconductor science and technology, 8(4), 1993, pp. 617-621

Authors: KLEIN W BOHM G TRANKLE G WEIMANN G
Citation: W. Klein et al., OPTIMIZED STRAINED INXGA1-XAS STRUCTURES FOR DEVICE APPLICATION, Journal of crystal growth, 127(1-4), 1993, pp. 36-40

Authors: BOHM G KLEIN W ROHR T TRANKLE G WEIMANN G SCHNELL RD SCHLEICHER L
Citation: G. Bohm et al., HIGH-PERFORMANCE MBE OF (IN)GAAS ALGAAS HETEROSTRUCTURES FOR HEMTS/, Journal of crystal growth, 127(1-4), 1993, pp. 81-84

Authors: ROTHFRITZ H MULLER R TRANKLE G KEMPTER R PLAUTH J WEIMANN G
Citation: H. Rothfritz et al., ALGAAS GAAS HETEROSTRUCTURES FOR HEMT APPLICATIONS GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 179-183

Authors: WALTHER M ROHR T BOHM G TRANKLE G WEIMANN G
Citation: M. Walther et al., FACETED MBE GROWTH OF (GAAL)AS ON RIE PATTERNED SURFACES, Journal of crystal growth, 127(1-4), 1993, pp. 1045-1050

Authors: HOFLER A GULDEN KH KIESEL P KNIESSL M KNUPFER B RIEL P DOHLER GH TRANKLE G WEIMANN G
Citation: A. Hofler et al., LOW-POWER (BISTABLE) OPTOELECTRICAL THRESHOLD SWITCHES WITH HIGH-GAINBASED ON N-I-P-I DOPING SUPERLATTICES, Applied physics letters, 62(26), 1993, pp. 3399-3401
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