Authors:
BERNHARD K
ZRENNER A
BOHM G
TRANKLE G
WEIMANN G
Citation: K. Bernhard et al., CHARGE-TRANSFER AND ELECTROABSORPTION IN AN ELECTRIC-FIELD TUNABLE DOUBLE-QUANTUM-WELL STRUCTURE, Solid-state electronics, 37(4-6), 1994, pp. 1307-1310
Authors:
BRUNNER K
ABSTREITER G
BOHM G
TRANKLE G
WEIMANN G
Citation: K. Brunner et al., SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS ALGAAS STRUCTURE/, Physical review letters, 73(8), 1994, pp. 1138-1141
Authors:
ROTHFRITZ H
MULLER R
BUCHEGGER C
TRANKLE G
WEIMANN G
Citation: H. Rothfritz et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF GAINAS(P) INP HETEROSTRUCTURES FOR LASER APPLICATIONS/, Journal of crystal growth, 136(1-4), 1994, pp. 225-229
Authors:
BAUMGARTNER P
BRUNNER K
ABSTREITER G
BOHM G
TRANKLE G
WEIMANN G
Citation: P. Baumgartner et al., FABRICATION OF IN-PLANE-GATE TRANSISTOR STRUCTURES BY FOCUSED LASER BEAM-INDUCED ZN DOPING OF MODULATION-DOPED GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 64(5), 1994, pp. 592-594
Authors:
BRUNNER K
ABSTREITER G
BOHM G
TRANKLE G
WEIMANN G
Citation: K. Brunner et al., SHARP-LINE PHOTOLUMINESCENCE OF EXCITONS LOCALIZED AT GAAS ALGAAS QUANTUM-WELL INHOMOGENEITIES/, Applied physics letters, 64(24), 1994, pp. 3320-3322
Authors:
ROHR T
WALTHER M
ROCHUS S
BOHM G
KLEIN W
TRANKLE G
WEIMANN G
Citation: T. Rohr et al., MBE REGROWTH OF GAAS ALGAAS STRUCTURES ON RIE PATTERNED SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 153-156
Authors:
HIRLER F
STRENZ R
KUCHLER R
ABSTREITER G
BOHM G
SMOLINER J
TRANKLE G
WEIMANN G
Citation: F. Hirler et al., SPATIALLY DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN SHALLOW ETCHED GAAS ALGAAS WIRES, DOTS AND ANTIDOTS/, Semiconductor science and technology, 8(4), 1993, pp. 617-621
Authors:
ROTHFRITZ H
MULLER R
TRANKLE G
KEMPTER R
PLAUTH J
WEIMANN G
Citation: H. Rothfritz et al., ALGAAS GAAS HETEROSTRUCTURES FOR HEMT APPLICATIONS GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 179-183
Authors:
HOFLER A
GULDEN KH
KIESEL P
KNIESSL M
KNUPFER B
RIEL P
DOHLER GH
TRANKLE G
WEIMANN G
Citation: A. Hofler et al., LOW-POWER (BISTABLE) OPTOELECTRICAL THRESHOLD SWITCHES WITH HIGH-GAINBASED ON N-I-P-I DOPING SUPERLATTICES, Applied physics letters, 62(26), 1993, pp. 3399-3401