Authors: VANHELLEMONT J SENKADER S KISSINGER G HIGGS V TRAUWAERT MA GRAF D LAMBERT U WAGNER P

Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362

Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G STESMANS A CLAUWS P

Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199

Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G CLAUWS P

Citation: Ma. Trauwaert et al., LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES, Applied physics letters, 66(22), 1995, pp. 3057-3058

Authors: VANHELLEMONT J KANIAVA A SIMOEN E TRAUWAERT MA CLAEYS C JOHLANDER B HARBOESORENSEN R ADAMS L CLAUWS P

Citation: J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486