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Results: 1-7 |
Results: 7

Authors: VASILEV VI DERYAGIN AG KUCHINSKII VI SMIRNOV VM SOKOLOVSKII GS TRETYAKOV DN FALEEV NN
Citation: Vi. Vasilev et al., PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION, Technical physics letters, 24(3), 1998, pp. 231-232

Authors: ABRAMOV AV DERYAGIN AG DERYAGIN NG KOKHANOVSKII SI KUCHINSKII VI RAFAILOV EU SOKOLOVSKII GS TRETYAKOV DN
Citation: Av. Abramov et al., PHOTOLUMINESCENCE PROPERTIES OF ALXGA1-XAS EPITAXIAL LAYERS GROWN UNDER CONDITIONS OF ULTRAFAST FLUX COOLING, Technical physics letters, 23(3), 1997, pp. 172-174

Authors: ABRAMOV AV DERYAGIN NG TRETYAKOV DN
Citation: Av. Abramov et al., SUPERCRITICAL SUPERSATURATIONS AND ULTRAFAST COOLING OF THE GROWTH SOLUTION IN LIQUID-PHASE EPITAXY OF SEMICONDUCTORS, Semiconductor science and technology, 11(4), 1996, pp. 607-619

Authors: ABRAMOV AV BER BY DERYAGIN NG MERKULOV AV TRETYAKOV DN
Citation: Av. Abramov et al., STUDY OF PARAMETERS OF GAAS AND ALXGA1-XA S LAYERS GROWN BY THE LIQUID-PHASE EPITAXY TECHNIQUE UNDER SUPERHIGH COOLING RATE OF SOLUTION-FUSION, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 34-38

Authors: ABRAMOV AV DERYAGIN NG MILVIDSKII MG TRETYAKOV DN YUGOVA TG
Citation: Av. Abramov et al., SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES, Kristallografia, 40(5), 1995, pp. 906-912

Authors: ABRAMOV AV DERYAGIN NG TRETYAKOV DN
Citation: Av. Abramov et al., GROWTH OF GAAS AND (GE2)(X)(GAAS)(1-X) ON SI USING ULTRAFAST COOLING OF THE GROWTH SOLUTION, Semiconductor science and technology, 9(10), 1994, pp. 1815-1822

Authors: ABRAMOV AV DERYAGIN NG TRETYAKOV DN FALEEV NN
Citation: Av. Abramov et al., STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 45-49
Risultati: 1-7 |