AAAAAA
Results:
1-7
|
Results: 7
Authors:
VASILEV VI
DERYAGIN AG
KUCHINSKII VI
SMIRNOV VM
SOKOLOVSKII GS
TRETYAKOV DN
FALEEV NN
Citation: Vi. Vasilev et al., PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION, Technical physics letters, 24(3), 1998, pp. 231-232
Authors:
ABRAMOV AV
DERYAGIN AG
DERYAGIN NG
KOKHANOVSKII SI
KUCHINSKII VI
RAFAILOV EU
SOKOLOVSKII GS
TRETYAKOV DN
Citation: Av. Abramov et al., PHOTOLUMINESCENCE PROPERTIES OF ALXGA1-XAS EPITAXIAL LAYERS GROWN UNDER CONDITIONS OF ULTRAFAST FLUX COOLING, Technical physics letters, 23(3), 1997, pp. 172-174
Authors:
ABRAMOV AV
DERYAGIN NG
TRETYAKOV DN
Citation: Av. Abramov et al., SUPERCRITICAL SUPERSATURATIONS AND ULTRAFAST COOLING OF THE GROWTH SOLUTION IN LIQUID-PHASE EPITAXY OF SEMICONDUCTORS, Semiconductor science and technology, 11(4), 1996, pp. 607-619
Authors:
ABRAMOV AV
BER BY
DERYAGIN NG
MERKULOV AV
TRETYAKOV DN
Citation: Av. Abramov et al., STUDY OF PARAMETERS OF GAAS AND ALXGA1-XA S LAYERS GROWN BY THE LIQUID-PHASE EPITAXY TECHNIQUE UNDER SUPERHIGH COOLING RATE OF SOLUTION-FUSION, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 34-38
Authors:
ABRAMOV AV
DERYAGIN NG
MILVIDSKII MG
TRETYAKOV DN
YUGOVA TG
Citation: Av. Abramov et al., SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES, Kristallografia, 40(5), 1995, pp. 906-912
Authors:
ABRAMOV AV
DERYAGIN NG
TRETYAKOV DN
Citation: Av. Abramov et al., GROWTH OF GAAS AND (GE2)(X)(GAAS)(1-X) ON SI USING ULTRAFAST COOLING OF THE GROWTH SOLUTION, Semiconductor science and technology, 9(10), 1994, pp. 1815-1822
Authors:
ABRAMOV AV
DERYAGIN NG
TRETYAKOV DN
FALEEV NN
Citation: Av. Abramov et al., STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 45-49
Risultati:
1-7
|