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Results: 1-20 |
Results: 20
HIGH-RESOLUTION DEPTH PROFILING IN SILICON OXYNITRIDE FILMS USING NARROW NUCLEAR-REACTION RESONANCES
Authors: GOSSET LG GANEM JJ TRIMAILLE I RIGO S ROCHET F DUFOUR G JOLLY F STEDILE FC BAUMVOL IJR
Citation: Lg. Gosset et al., HIGH-RESOLUTION DEPTH PROFILING IN SILICON OXYNITRIDE FILMS USING NARROW NUCLEAR-REACTION RESONANCES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 521-527
INCORPORATION OF OXYGEN AND NITROGEN IN ULTRATHIN FILMS OF SIO2 ANNEALED IN NO
Authors: BAUMVOL IJR GANEM JJ GOSSET LG TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., INCORPORATION OF OXYGEN AND NITROGEN IN ULTRATHIN FILMS OF SIO2 ANNEALED IN NO, Applied physics letters, 72(23), 1998, pp. 2999-3001
DIFFUSION OF NEAR-SURFACE DEFECTS DURING THE THERMAL-OXIDATION OF SILICON
Authors: GANEM JJ TRIMAILLE I ANDRE P RIGO S STEDILE FC BAUMVOL IJR
Citation: Jj. Ganem et al., DIFFUSION OF NEAR-SURFACE DEFECTS DURING THE THERMAL-OXIDATION OF SILICON, Journal of applied physics, 81(12), 1997, pp. 8109-8111
ISOTOPIC TRACING DURING RAPID THERMAL GROWTH OF SILICON OXYNITRIDE FILMS ON SI IN O-2, NH3, AND N2O
Authors: BAUMVOL IJR STEDILE FC GANEM JJ TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., ISOTOPIC TRACING DURING RAPID THERMAL GROWTH OF SILICON OXYNITRIDE FILMS ON SI IN O-2, NH3, AND N2O, Applied physics letters, 70(15), 1997, pp. 2007-2009
THICKNESS OF THE SIO2 SI INTERFACE AND COMPOSITION OF SILICON-OXIDE THIN-FILMS - EFFECT OF WAFER CLEANING PROCEDURES/
Authors: STEDILE FC BAUMVOL IJR OPPENHEIM IF TRIMAILLE I GANEM JJ RIGO S
Citation: Fc. Stedile et al., THICKNESS OF THE SIO2 SI INTERFACE AND COMPOSITION OF SILICON-OXIDE THIN-FILMS - EFFECT OF WAFER CLEANING PROCEDURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 493-498
ISOTOPIC TRACING OF SI DURING THERMAL GROWTH OF SI3N4 ULTRATHIN FILMS
Authors: BAUMVOL IJR BORUCKI L CHAUMONT J GANEM JJ KAYTASOV O PIEL N RIGO S SCHULTE WH STEDILE FC TRIMAILLE I
Citation: Ijr. Baumvol et al., ISOTOPIC TRACING OF SI DURING THERMAL GROWTH OF SI3N4 ULTRATHIN FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 499-504
THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - ISOTOPIC TRACING OF NITROGEN AND OXYGEN IN THE INITIAL-STAGES
Authors: BAUMVOL IJR STEDILE FC GANEM JJ TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - ISOTOPIC TRACING OF NITROGEN AND OXYGEN IN THE INITIAL-STAGES, Journal of the Electrochemical Society, 143(9), 1996, pp. 2938-2945
THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - ISOTOPIC TRACING OF NITROGEN AND OXYGEN IN FURTHER STAGES AND IN REOXIDATION
Authors: BAUMVOL IJR STEDILE FC GANEM JJ TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - ISOTOPIC TRACING OF NITROGEN AND OXYGEN IN FURTHER STAGES AND IN REOXIDATION, Journal of the Electrochemical Society, 143(9), 1996, pp. 2946-2952
THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - THE ROLE OF HYDROGEN
Authors: BAUMVOL IJR STEDILE FC GANEM JJ TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., THERMAL NITRIDATION OF SIO2-FILMS IN AMMONIA - THE ROLE OF HYDROGEN, Journal of the Electrochemical Society, 143(4), 1996, pp. 1426-1434
NITROGEN TRANSPORT DURING RAPID THERMAL GROWTH OF SILICON OXYNITRIDE FILMS IN N2O
Authors: BAUMVOL IJR STEDILE FC GANEM JJ TRIMAILLE I RIGO S
Citation: Ijr. Baumvol et al., NITROGEN TRANSPORT DURING RAPID THERMAL GROWTH OF SILICON OXYNITRIDE FILMS IN N2O, Applied physics letters, 69(16), 1996, pp. 2385-2387
DRY OXIDATION MECHANISMS OF THIN DIELECTRIC FILMS FORMED UNDER N2O USING ISOTOPIC TRACING METHODS
Authors: GANEM JJ RIGO S TRIMAILLE I BAUMVOL IJR STEDILE FC
Citation: Jj. Ganem et al., DRY OXIDATION MECHANISMS OF THIN DIELECTRIC FILMS FORMED UNDER N2O USING ISOTOPIC TRACING METHODS, Applied physics letters, 68(17), 1996, pp. 2366-2368
ATOMIC TRANSPORT DURING THERMAL GROWTH OF SILICON-NITRIDE
Authors: BAUMVOL IJR STEDILE FC GANEM JJ RIGO S TRIMAILLE I
Citation: Ijr. Baumvol et al., ATOMIC TRANSPORT DURING THERMAL GROWTH OF SILICON-NITRIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 462-467
DEGRADATION OF VERY THIN GATE DIELECTRICS FOR MOS STRUCTURES DUE TO THROUGH-OXIDE ION-IMPLANTATION
Authors: BAUMVOL IJR STEDILE FC RIGO S GANEM JJ TRIMAILLE I BATTISTIG G LHOIR A SCHULTE WH BECKER HW
Citation: Ijr. Baumvol et al., DEGRADATION OF VERY THIN GATE DIELECTRICS FOR MOS STRUCTURES DUE TO THROUGH-OXIDE ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 92-98
MECHANISMS OF THERMAL NITRIDATION OF SILICON
Authors: BAUMVOL IJR STEDILE FC GANEM JJ RIGO S TRIMAILLE I
Citation: Ijr. Baumvol et al., MECHANISMS OF THERMAL NITRIDATION OF SILICON, Journal of the Electrochemical Society, 142(4), 1995, pp. 1205-1214
IBA STUDY OF THE GROWTH MECHANISMS OF VERY THIN SILICON-OXIDE FILMS -THE EFFECT OF WAFER CLEANING
Authors: STEDILE FC BAUMVOL IJR GANEM JJ RIGO S TRIMAILLE I BATTISTIG G SCHULTE WH BECKER HW
Citation: Fc. Stedile et al., IBA STUDY OF THE GROWTH MECHANISMS OF VERY THIN SILICON-OXIDE FILMS -THE EFFECT OF WAFER CLEANING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 248-254
HIGH-RESOLUTION LOW-ENERGY RESONANCE DEPTH PROFILING OF O-18 IN NEAR-SURFACE ISOTOPIC TRACING STUDIES
Authors: BATTISTIG G AMSEL G TRIMAILLE I GANEM JJ RIGO S STEDILE FC BAUMVOL IJR SCHULTE WH BECKER HW
Citation: G. Battistig et al., HIGH-RESOLUTION LOW-ENERGY RESONANCE DEPTH PROFILING OF O-18 IN NEAR-SURFACE ISOTOPIC TRACING STUDIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 326-330
COMBINATION OF IBA TECHNIQUES AND RAMAN-SPECTROSCOPY TO STUDY DEFECTSIN O-18 LABELED YBACUO THIN-FILMS
Authors: LOPEZ JG WONG JCC ORTEGA C SIEJKA J TRIMAILLE I SACUTO A LINKER G MEYER O
Citation: Jg. Lopez et al., COMBINATION OF IBA TECHNIQUES AND RAMAN-SPECTROSCOPY TO STUDY DEFECTSIN O-18 LABELED YBACUO THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 462-467
SELECTIVE O-18 LABELING IN A-AXIS ORIENTED YBACUO THIN-FILMS
Authors: WONG JCC ORTEGA C SIEJKA J TRIMAILLE I SACUTO A MEYER O LINKER G MAYCA F
Citation: Jcc. Wong et al., SELECTIVE O-18 LABELING IN A-AXIS ORIENTED YBACUO THIN-FILMS, Journal of alloys and compounds, 195(1-2), 1993, pp. 137-140
STUDY OF OXYGEN-CONTENT AND OF DISORDER IN YBACUO THIN-FILMS WITH ENLARGED C-AXIS LATTICE-PARAMETER
Authors: WONG JCC ORTEGA C SIEJKA J TRIMAILLE I SACUTO A MERCANDALLI LM MAYCA F
Citation: Jcc. Wong et al., STUDY OF OXYGEN-CONTENT AND OF DISORDER IN YBACUO THIN-FILMS WITH ENLARGED C-AXIS LATTICE-PARAMETER, Journal of alloys and compounds, 195(1-2), 1993, pp. 675-678
MODELLIZATION OF THE SILICON RAPID THERMAL-OXIDATION IN THE INITIAL-STAGES ACCORDING TO THE SILICON FRAGMENTS MODEL
Authors: GANEM JJ RIGO S TRIMAILLE I
Citation: Jj. Ganem et al., MODELLIZATION OF THE SILICON RAPID THERMAL-OXIDATION IN THE INITIAL-STAGES ACCORDING TO THE SILICON FRAGMENTS MODEL, Microelectronic engineering, 22(1-4), 1993, pp. 35-38
Risultati: 1-20 |