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Results:
1-7
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Results: 7
Authors:
CONSTANTINIDIS G
KUZMIC J
MICHELAKIS K
TSAGARAKI K
Citation: G. Constantinidis et al., SCHOTTKY CONTACTS ON CF4 H-2 REACTIVE ION ETCHED BETA-SIC/, Solid-state electronics, 42(2), 1998, pp. 253-256
Authors:
ZEKENTES K
BECOURT N
ANDROULIDAKI M
TSAGARAKI K
STOEMENOS J
BLUET JM
CAMASSEL J
PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
Authors:
GEORGAKILAS A
PAPAVASSILIOU C
CONSTANTINIDIS G
TSAGARAKI K
KRASNY H
LOCHTERMANN E
PANAYOTATOS P
Citation: A. Georgakilas et al., EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 67-72
Authors:
LAGADAS M
HATZOPOULOS Z
TSAGARAKI K
CALAMIOTOU M
LIOUTAS C
CHRISTOU A
Citation: M. Lagadas et al., THE EFFECT OF ARSENIC OVERPRESSURE ON THE STRUCTURAL-PROPERTIES GAAS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 80(8), 1996, pp. 4377-4383
Authors:
ZEKENTES K
CALLEC R
TSAGARAKI K
SAGNES B
ARNAUD G
PASCUAL J
CAMASSEL J
Citation: K. Zekentes et al., CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 138-141
Authors:
GEORGAKILAS A
STOEMENOS J
TSAGARAKI K
KOMNINOU P
FLEVARIS N
PANAYOTATOS P
CHRISTOU A
Citation: A. Georgakilas et al., GENERATION AND ANNIHILATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ONSI GROWN BY MOLECULAR-BEAM EPITAXY, Journal of materials research, 8(8), 1993, pp. 1908-1921
Authors:
LAGADAS M
TSAGARAKI K
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., INVESTIGATION OF LOW-TEMPERATURE (LT) LAYERS OF GAAS GROWN BY MBE - COMPARISON OF MESFET AND HEMT PERFORMANCE, Journal of crystal growth, 127(1-4), 1993, pp. 76-80
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1-7
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