AAAAAA

   
Results: 1-19 |
Results: 19
A U-GROOVED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (UMSM-PD) WITH ANI-A-SI-H OVERLAYER ON A [100]P-TYPE SI WAFER
Authors: LAIH LH CHANG TC CHEN YA TSAY WC HONG JW
Citation: Lh. Laih et al., A U-GROOVED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (UMSM-PD) WITH ANI-A-SI-H OVERLAYER ON A [100]P-TYPE SI WAFER, IEEE photonics technology letters, 10(4), 1998, pp. 579-581
FABRICATION OF DOUBLE-METAL AC-COUPLED SILICON MICROSTRIP DETECTORS
Authors: TSAY WC CHEN YA LAIH LH HONG JW CHEN AE LIN WT CHANG YH HOU SR LI CR TING HJ LIANG WC TANG JD CHENG CCP CHIANG ST
Citation: Wc. Tsay et al., FABRICATION OF DOUBLE-METAL AC-COUPLED SILICON MICROSTRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 405(1), 1998, pp. 13-19
STUDIES ON REDUCING LEAKAGE CURRENT OF LARGE-AREA SILICON MICROSTRIP SENSORS
Authors: TSAY WC CHEN YA LAIH LH HONG JW CHEN AE LIN WT CHANG YH HOU SR LI CR TING HJ LIANG WC CHENG CCP CHIANG ST
Citation: Wc. Tsay et al., STUDIES ON REDUCING LEAKAGE CURRENT OF LARGE-AREA SILICON MICROSTRIP SENSORS, IEEE transactions on nuclear science, 45(2), 1998, pp. 186-194
CHARACTERISTICS OF MSM PHOTODETECTORS WITH TRENCH ELECTRODES ON P-TYPE SI WAFER
Authors: LAIH LH CHANG TC CHEN YA TSAY WC HONG JW
Citation: Lh. Laih et al., CHARACTERISTICS OF MSM PHOTODETECTORS WITH TRENCH ELECTRODES ON P-TYPE SI WAFER, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2018-2023
OPTOELECTRONIC CHARACTERISTICS OF A-SIC-H-BASED PIN THIN-FILM LEDS HAVING A THIN MO BUFFER LAYER IN CONTACT WITH P-TYPE A-SI-H
Authors: CHEN YA WU YH TSAY WC LAIH LH HONG JW CHANG CY
Citation: Ya. Chen et al., OPTOELECTRONIC CHARACTERISTICS OF A-SIC-H-BASED PIN THIN-FILM LEDS HAVING A THIN MO BUFFER LAYER IN CONTACT WITH P-TYPE A-SI-H, Electronics Letters, 34(14), 1998, pp. 1433-1434
IMPROVING THE TRANSIENT-RESPONSE OF A SI METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH AN ADDITIONAL I-A-SIGE-H FILM
Authors: LAIH LH WANG JC CHEN YA TSAY WC JEN TS CHEN JS HONG JW
Citation: Lh. Laih et al., IMPROVING THE TRANSIENT-RESPONSE OF A SI METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH AN ADDITIONAL I-A-SIGE-H FILM, JPN J A P 1, 36(3B), 1997, pp. 1494-1496
IMPROVEMENT OF CURRENT INJECTION OF POROUS SILICON
Authors: CHEN YA LIANG NY LAIH LH TSAY WC CHANG MN HONG JW
Citation: Ya. Chen et al., IMPROVEMENT OF CURRENT INJECTION OF POROUS SILICON, JPN J A P 1, 36(3B), 1997, pp. 1574-1577
POROUS SILICON LIGHT-EMITTING DIODE WITH TUNABLE COLOR
Authors: CHEN YA CHEN BF TSAY WC LAIH LH CHANG MN CHYI JI HONG JW CHANG CY
Citation: Ya. Chen et al., POROUS SILICON LIGHT-EMITTING DIODE WITH TUNABLE COLOR, Solid-state electronics, 41(5), 1997, pp. 757-759
CHARACTERISTICS OF SI-BASED MSM PHOTODETECTORS WITH AN AMORPHOUS-CRYSTALLINE HETEROJUNCTION
Authors: LAIH LH WANG JC CHEN YA JEN TS TSAY WC HONG JW
Citation: Lh. Laih et al., CHARACTERISTICS OF SI-BASED MSM PHOTODETECTORS WITH AN AMORPHOUS-CRYSTALLINE HETEROJUNCTION, Solid-state electronics, 41(11), 1997, pp. 1693-1697
OPTOELECTRONIC CHARACTERISTICS OF ALPHA-SIC-H-BASED P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH LOW-RESISTANCE AND HIGH-REFLECTANCE N-ALPHA-SICGE-H LAYER()
Authors: CHEN YA CHIOU CF TSAY WC LAIH LH HONG JW CHANG CY
Citation: Ya. Chen et al., OPTOELECTRONIC CHARACTERISTICS OF ALPHA-SIC-H-BASED P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH LOW-RESISTANCE AND HIGH-REFLECTANCE N-ALPHA-SICGE-H LAYER(), I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1360-1366
IMPROVEMENT OF ELECTROLUMINESCENCE CHARACTERISTICS OF POROUS SILICON LED BY USING AMORPHOUS-SILICON LAYERS
Authors: CHEN YA LIANG NY LAIH LH TSAY WC CHANG MN HONG JW
Citation: Ya. Chen et al., IMPROVEMENT OF ELECTROLUMINESCENCE CHARACTERISTICS OF POROUS SILICON LED BY USING AMORPHOUS-SILICON LAYERS, Electronics Letters, 33(17), 1997, pp. 1489-1490
DOUBLE GRADED-GAP HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH COMPOSITION-GRADED N LAYER AND CARBON-INCREASING P LAYER
Authors: CHEN YA CHEN JK TSAY WC LAIH LH HONG JW CHANG CY
Citation: Ya. Chen et al., DOUBLE GRADED-GAP HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH COMPOSITION-GRADED N LAYER AND CARBON-INCREASING P LAYER, JPN J A P 1, 35(2B), 1996, pp. 1018-1021
EFFECTS OF DIELECTRICS ON THE CHARACTERISTICS OF LARGE-AREA SILICON MICROSTRIP SENSORS
Authors: TSAY WC CHEN YA LAIH LH HONG JW CHEN AE LIN WT CHANG YH HOU SR HSU SL LI CR TING HJ CHIANG ST
Citation: Wc. Tsay et al., EFFECTS OF DIELECTRICS ON THE CHARACTERISTICS OF LARGE-AREA SILICON MICROSTRIP SENSORS, JPN J A P 1, 35(2B), 1996, pp. 1077-1081
HIGH RESPONSIVITY A-SI-H BOTTOM-ELECTRODE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (BMSM-PD)
Authors: LAIH LH CHEN YA TSAY WC HONG JW
Citation: Lh. Laih et al., HIGH RESPONSIVITY A-SI-H BOTTOM-ELECTRODE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (BMSM-PD), Electronics Letters, 32(10), 1996, pp. 929-930
STUDIES OF LARGE-AREA SILICON MICROSTRIP SENSORS
Authors: TSAY WC HONG JW CHANG YH CHEN A HOU SR HSU SL LIN CH LIN WT TING HJ CHIANG ST CHUANG E HWANG SW
Citation: Wc. Tsay et al., STUDIES OF LARGE-AREA SILICON MICROSTRIP SENSORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 437-440
HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON
Authors: LAIH LH TSAY WC CHEN YA JEN TS YUANG RH HONG JW
Citation: Lh. Laih et al., HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON, Electronics Letters, 31(24), 1995, pp. 2123-2124
HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
Authors: JEN TS PAN JW SHIN NF TSAY WC HONG JW CHANG CY
Citation: Ts. Jen et al., HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE, JPN J A P 1, 33(1B), 1994, pp. 827-831
IMPROVED PROCESS OF FABRICATING AC-COUPLED SILICON MICRO-STRIP SENSORS
Authors: TSAY WC HONG JW CHEN A LIN WT HSU CY JAN SM KUO CL
Citation: Wc. Tsay et al., IMPROVED PROCESS OF FABRICATING AC-COUPLED SILICON MICRO-STRIP SENSORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 351(2-3), 1994, pp. 463-465
ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
Authors: JEN TS SHIN NF TSAY WC CHEN JY NING SL HONG JW CHANG CY
Citation: Ts. Jen et al., ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES, Solid-state electronics, 37(9), 1994, pp. 1619-1626
Risultati: 1-19 |