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Results:
1-11
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Results: 11
Authors:
ZHU W
TAN OK
TSE MS
YAO X
Citation: W. Zhu et al., FERROELECTRIC (BA0.67SR0.33)TI1.02O3 THIN-FILM H-2 GAS SENSOR BY SOL-GEL DEPOSITION TECHNOLOGY, Journal of the Korean Physical Society, 32, 1998, pp. 1778-1780
Authors:
ZHU W
TSE MS
LU W
Citation: W. Zhu et al., RAMAN, X-RAY AND ELECTRICAL-PROPERTIES OF MOD PZT PLZT THIN-FILMS/, Integrated ferroelectrics, 12(2-4), 1996, pp. 167-175
Authors:
ZHU W
LIU ZQ
LU W
TSE MS
TAN HS
YAO X
Citation: W. Zhu et al., SYSTEMATIC STUDY ON STRUCTURAL AND DIELECTRIC-PROPERTIES OF LEAD ZIRCONATE TITANATE (PB,LA)(ZR(1-X)TI(X))O-3 THIN-FILMS DEPOSITED BY METALLOORGANIC DECOMPOSITION TECHNOLOGY/, Journal of applied physics, 79(8), 1996, pp. 4283-4290
Authors:
ZHU W
LIU ZQ
TSE MS
LU W
TAN HS
Citation: W. Zhu et al., LA DOPED PZT 60 40 FILMS BY MOD TECHNOLOGY, Integrated ferroelectrics, 9(1-3), 1995, pp. 95-104
Authors:
ZHU W
LIU ZQ
TSE MS
TAN HS
Citation: W. Zhu et al., RAMAN, FT-IR AND DIELECTRIC STUDIES OF PZT-40 60 FILMS DEPOSITED BY MOD TECHNOLOGY/, Journal of materials science. Materials in electronics, 6(6), 1995, pp. 369-374
Authors:
LEE HJ
TSE MS
RADHAKRISHNAN K
PRASAD K
WENG J
YOON SF
ZHOU X
TAN HS
TING SK
LEONG YC
Citation: Hj. Lee et al., SELECTIVE WET ETCHING OF A GAAS ALXGA1-XAS HETEROSTRUCTURE WITH CITRIC ACID-HYDROGEN PEROXIDE SOLUTIONS FOR PSEUDOMORPHIC GAAS/ALXGA1-XAS/INYGA1-Y HETEROJUNCTION FIELD-EFFECT TRANSISTOR FABRICATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 230-233
Authors:
LEE HJ
TSE MS
RADHAKRISHNAN K
PRASAD K
WENG J
YOON SF
ZHOU X
TAN HS
Citation: Hj. Lee et al., CHARACTERIZATION OF NI GE/AU/NI/AU CONTACT METALLIZATION ON ALGAAS/INGAAS HETEROSTRUCTURES FOR PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 234-238
Authors:
LIU Y
ZHU W
TSE MS
SHEN SY
Citation: Y. Liu et al., STUDY OF A NEW ALCOHOL GAS SENSOR MADE FROM ULTRAFINE SNO2-FE2O3 POWDERS, Journal of materials science letters, 14(17), 1995, pp. 1185-1187
Authors:
ZHU W
VEST RW
TSE MS
RAO MK
LIU ZQ
Citation: W. Zhu et al., CHARACTERISTICS OF FERROELECTRIC 60 40 PZT FILMS DEPOSITED BY METALLOORGANIC DECOMPOSITION TECHNOLOGY FOR MEMORY APPLICATIONS/, Journal of materials science. Materials in electronics, 5(3), 1994, pp. 173-179
Authors:
WONG WK
LAI KK
TSE MS
TSE MC
GAO JX
WONG WT
CHAN S
Citation: Wk. Wong et al., REACTIVITY OF RU(OAC)2(PH3P)2 TOWARD CHELATING DIPHOSPHINE LIGANDS - X-RAY CRYSTAL-STRUCTURES OF FAC-RU(OAC)2(PH3P)(DPPM) AND TRANS-RU(OAC)2(P2N2H4), Polyhedron, 13(19), 1994, pp. 2751-2762
Authors:
TSE MS
POON MC
LAM YW
Citation: Ms. Tse et al., A NEW DC ALGORITHM TO EXTRACT MOSFET PARAMETERS, Semiconductor science and technology, 6(7), 1991, pp. 635-637
Risultati:
1-11
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