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Results: 1-25/102
Authors:
XIN HP
TU CW
Citation: Hp. Xin et Cw. Tu, GAINNAS GAAS MULTIPLE-QUANTUM WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Applied physics letters, 72(19), 1998, pp. 2442-2444
Authors:
TU CW
BI WG
MA Y
ZHANG JP
WANG LW
HO ST
Citation: Cw. Tu et al., A NOVEL MATERIAL FOR LONG-WAVELENGTH LASERS - INNASP, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 510-513
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., ATOMIC-SCALE COMPOSITIONAL STRUCTURE OF INASP INP AND INNASP/INP HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2395-2398
Authors:
ZHAO Y
DENG F
LAU SS
TU CW
Citation: Y. Zhao et al., EFFECTS OF ARSENIC IN GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1297-1299
Authors:
TOMICH DH
EYINK KG
SEAFORD ML
TAFERNER WF
TU CW
LAMPERT WV
Citation: Dh. Tomich et al., ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1479-1483
Authors:
LOI KK
HODIAK JH
MEI XB
TU CW
CHANG WSC
Citation: Kk. Loi et al., LINEARIZATION OF 1.3-MU-M MQW ELECTROABSORPTION MODULATORS USING AN ALL-OPTICAL FREQUENCY-INSENSITIVE TECHNIQUE, IEEE photonics technology letters, 10(7), 1998, pp. 964-966
Authors:
LOI KK
HODIAK JH
MEI XB
TU CW
CHANO WSC
NICHOLS DT
LEMBO LJ
BROCK JC
Citation: Kk. Loi et al., LOW-LOSS 1.3-MU-M MQW ELECTROABSORPTION MODULATORS FOR HIGH-LINEARITYANALOG OPTICAL LINKS, IEEE photonics technology letters, 10(11), 1998, pp. 1572-1574
Authors:
LI NY
TU CW
Citation: Ny. Li et Cw. Tu, LOW-RESISTANCE POLYCRYSTALLINE GAAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4, Journal of crystal growth, 188(1-4), 1998, pp. 45-49
Authors:
EGOROV AY
KOVSH AR
USTINOV VM
ZHUKOV AE
KOPEV PS
TU CW
Citation: Ay. Egorov et al., A THERMODYNAMIC ANALYSIS OF THE GROWTH OF III-V COMPOUNDS WITH 2 VOLATILE GROUP-V ELEMENTS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 69-74
Authors:
HSIN YM
LI NY
TU CW
ASBECK PM
Citation: Ym. Hsin et al., ALGAAS GAAS HBTS WITH EXTRINSIC BASE REGROWTH, Journal of crystal growth, 188(1-4), 1998, pp. 355-358
Authors:
LIU QZ
CHEN WX
LI NY
YU LS
TU CW
YU PKL
LAU SS
ZAPPE HP
Citation: Qz. Liu et al., PLANAR SEMICONDUCTOR-LASERS USING THE PHOTOELASTIC EFFECT, Journal of applied physics, 83(12), 1998, pp. 7442-7447
Authors:
LOI KK
MEI XB
HODIAK JH
TU CW
CHANG WSC
Citation: Kk. Loi et al., 38GHZ BANDWIDTH 1.3 MU-M MQW ELECTROABSORPTION MODULATORS FOR RF PHOTONIC LINKS, Electronics Letters, 34(10), 1998, pp. 1018-1019
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF ATOMIC-SCALE CLUSTERING IN INASP INP HETEROSTRUCTURES/, Applied physics letters, 72(17), 1998, pp. 2135-2137
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, GROWTH AND CHARACTERIZATION OF INNXASYP1-X-Y INP STRAINED-QUANTUM-WELL STRUCTURES/, Applied physics letters, 72(10), 1998, pp. 1161-1163
Authors:
DONG HK
LI NY
WONG WS
TU CW
Citation: Hk. Dong et al., GROWTH, DOPING, AND ETCHING OF GAAS AND INGAAS USING TRIS-DIMETHYLAMINOARSENIC, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 159-166
Authors:
BI WG
MA Y
ZHANG JP
WANG LW
HO ST
TU CW
Citation: Wg. Bi et al., IMPROVED HIGH-TEMPERATURE PERFORMANCE OF 1.3-1.5-MU-M INNASP-INGAASP QUANTUM-WELL MICRODISK LASERS, IEEE photonics technology letters, 9(8), 1997, pp. 1072-1074
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INNXP1-X ON INP, Journal of electronic materials, 26(3), 1997, pp. 252-256
Authors:
LEW AY
YAN CH
WELSTAND RB
ZHU JT
TU CW
YU PKL
Citation: Ay. Lew et al., INTERFACE STRUCTURE IN ARSENIDE PHOSPHIDE HETEROSTRUCTURES GROWN BY GAS-SOURCE MBE AND LOW-PRESSURE MOVPE/, Journal of electronic materials, 26(2), 1997, pp. 64-69
Authors:
TU CW
MEI XB
Citation: Cw. Tu et Xb. Mei, STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM-WELL WAVE-GUIDE MODULATORS AND IN-SITU MONITORED ALGAAS/ALAS MIRRORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Materials chemistry and physics, 51(1), 1997, pp. 1-5
Authors:
BUYANOVA IA
LUNDSTROM T
BUYANOV AV
CHEN WM
BI WG
TU CW
Citation: Ia. Buyanova et al., STRONG EFFECTS OF CARRIER CONCENTRATION ON THE FERMI-EDGE SINGULARITYIN MODULATION-DOPED INP INXGA1-XAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(11), 1997, pp. 7052-7058
Authors:
MEI XB
LOI KK
CHANG WSC
TU CW
Citation: Xb. Mei et al., IMPROVED ELECTROABSORPTION PROPERTIES IN 1.3 MU-M MQW WAVE-GUIDE MODULATORS BY A MODIFIED DOPING PROFILE, Journal of crystal growth, 175, 1997, pp. 994-998
Authors:
NIKI S
FONS PJ
SHIBATA H
KURAFUJI T
YAMADA A
OKADA Y
OYANAGI H
BI WG
TU CW
Citation: S. Niki et al., EFFECTS OF STRAIN ON THE GROWTH AND PROPERTIES OF CUINSE2 EPITAXIAL-FILMS, Journal of crystal growth, 175, 1997, pp. 1051-1056
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, N INCORPORATION IN GANXP1-X AND INNXP1-X USING A RF N PLASMA SOURCE, Journal of crystal growth, 175, 1997, pp. 145-149
Authors:
LI NY
HSIN YM
ASBECK PM
TU CW
Citation: Ny. Li et al., IMPROVING THE ETCHED REGROWN GAAS INTERFACE BY IN-SITU ETCHING USING TRIS-DIMETHYLAMINO ARSENIC/, Journal of crystal growth, 175, 1997, pp. 387-392
Authors:
LIU QZ
SHEN L
SMITH KV
TU CW
YU ET
LAU SS
PERKINS NR
KUECH TF
Citation: Qz. Liu et al., EPITAXY OF AL FILMS ON GAN STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-FORCE MICROSCOPY, Applied physics letters, 70(8), 1997, pp. 990-992