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Results:
1-12
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Results: 12
Authors:
Ishikawa, Y
Kosugi, M
Tsuchiya, T
Tabe, M
Citation: Y. Ishikawa et al., Concentration of electric field near Si dot/thermally-grown SiO2 interface, JPN J A P 1, 40(3B), 2001, pp. 1866-1869
Authors:
Sawada, K
Tabe, M
Ishikawa, Y
Iwatsuki, M
Ishida, M
Citation: K. Sawada et al., Field electron emission from silicon nanoprotrusions, JPN J A P 2, 40(8A), 2001, pp. L832-L834
Authors:
Tabe, M
Kumezawa, M
Ishikawa, Y
Citation: M. Tabe et al., Quantum-confinement effect in ultrathin Si layer of silicon-on-insulator substrate, JPN J A P 2, 40(2B), 2001, pp. L131-L133
Authors:
Tabe, M
Kumezawa, M
Ishikawa, Y
Mizuno, T
Citation: M. Tabe et al., Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers, APPL SURF S, 175, 2001, pp. 613-618
Authors:
Ishikawa, Y
Kosugi, M
Tabe, M
Citation: Y. Ishikawa et al., Effect of nanometer-scale corrugation on densities of gap states and fixedcharges at the thermally grown SiO2/Si interface, J APPL PHYS, 89(2), 2001, pp. 1256-1261
Authors:
Ishikawa, Y
Ishihara, T
Iwasaki, M
Tabe, M
Citation: Y. Ishikawa et al., Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure, ELECTR LETT, 37(19), 2001, pp. 1200-1201
Authors:
Nuryadi, R
Ishikawa, Y
Tabe, M
Citation: R. Nuryadi et al., Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure, APPL SURF S, 159, 2000, pp. 121-126
Authors:
Ishikawa, Y
Kosugi, M
Kumezawa, M
Tsuchiya, T
Tabe, M
Citation: Y. Ishikawa et al., Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidation, THIN SOL FI, 369(1-2), 2000, pp. 69-72
Authors:
Tabe, M
Terao, Y
Nuryadi, R
Ishikawa, Y
Asahi, N
Amemiya, Y
Citation: M. Tabe et al., Simulation of visible light induced effects in a tunnel junction array forphotonic device applications, JPN J A P 1, 38(1B), 1999, pp. 593-596
Authors:
Ishikawa, Y
Makita, S
Zhang, JH
Tsuchiya, T
Tabe, M
Citation: Y. Ishikawa et al., Capacitance-voltage study of silicon-on-insulator structure with an ultrathin buried SiO2 layer fabricated by wafer bonding, JPN J A P 2, 38(7B), 1999, pp. L789-L791
Authors:
Tabe, M
Kumezawa, M
Yamamoto, T
Makita, S
Yamaguchi, T
Ishikawa, Y
Citation: M. Tabe et al., Formation of high-density silicon dots on a silicon-on-insulator substrate, APPL SURF S, 142(1-4), 1999, pp. 553-557
Authors:
Tabe, M
Yamamoto, T
Citation: M. Tabe et T. Yamamoto, Reply to "Comment on 'Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies' by M. Tabe and T. Yamamoto" [Surf. Sci, 376(1997) 99], SURF SCI, 431(1-3), 1999, pp. 281-281
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