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Results: 1-9 |
Results: 9
Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells
Authors: Khan, A Yamaguchi, M Dharmaras, N Yamada, T Tanabe, T Takagishi, S Itoh, H Oshima, T Imaizumi, M Matsuda, S
Citation: A. Khan et al., Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells, JPN J A P 2, 40(7B), 2001, pp. L728-L731
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
Authors: Moto, A Tanaka, S Tanabe, T Takagishi, S
Citation: A. Moto et al., GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors, SOL EN MAT, 66(1-4), 2001, pp. 585-592
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
Authors: Dharmarasu, N Yamaguchi, M Khan, A Yamada, T Tanabe, T Takagishi, S Takamoto, T Ohshima, T Itoh, H Imaizumi, M Matsuda, S
Citation: N. Dharmarasu et al., High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells, APPL PHYS L, 79(15), 2001, pp. 2399-2401
Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature
Authors: Matsuda, K Saiki, T Takahashi, M Moto, A Takagishi, S
Citation: K. Matsuda et al., Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature, APPL PHYS L, 78(11), 2001, pp. 1508-1510
Effect of substrate orientation on photoluminescence of GaNAs
Authors: Moto, A Takahashi, M Takagishi, S
Citation: A. Moto et al., Effect of substrate orientation on photoluminescence of GaNAs, JPN J A P 2, 39(12B), 2000, pp. L1267-L1269
Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy
Authors: Takahashi, M Moto, A Tanaka, S Tanabe, T Takagishi, S Karatani, K Nakayama, M Matsuda, K Saiki, T
Citation: M. Takahashi et al., Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 461-466
Spatial distribution of deep level traps in GaNAs crystals
Authors: Tanaka, S Moto, A Takahashi, M Tanabe, T Takagishi, S
Citation: S. Tanaka et al., Spatial distribution of deep level traps in GaNAs crystals, J CRYST GR, 221, 2000, pp. 467-474
Hydrogen and carbon incorporation in GaInNAs
Authors: Moto, A Takahashi, M Takagishi, S
Citation: A. Moto et al., Hydrogen and carbon incorporation in GaInNAs, J CRYST GR, 221, 2000, pp. 485-490
Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)
Authors: Moto, A Tanaka, S Ikoma, N Tanabe, T Takagishi, S Takahashi, M Katsuyama, T
Citation: A. Moto et al., Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy), JPN J A P 1, 38(2B), 1999, pp. 1015-1018
Risultati: 1-9 |