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Results: 1-8 |
Results: 8
Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate
Authors: Tatsuoka, Y Uemura, M Kitada, T Shimomura, S Hiyamizu, S
Citation: Y. Tatsuoka et al., Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate, J CRYST GR, 227, 2001, pp. 266-270
Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy
Authors: Tatsuoka, Y Kamimoto, H Kitada, T Shimomura, S Hiyamizu, S
Citation: Y. Tatsuoka et al., Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1549-1552
In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Authors: Kamimoto, H Tatsuoka, Y Kitada, T Shimomura, S Hiyamizu, S
Citation: H. Kamimoto et al., In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1572-1575
As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates
Authors: Kitada, T Tatsuoka, Y Shimomura, S Hiyamizu, S
Citation: T. Kitada et al., As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates, J VAC SCI B, 18(3), 2000, pp. 1579-1582
Strained InGaAs AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy
Authors: Shimomura, S Ohta, K Tatsuoka, Y Hiyamizu, S Fujita, K Egami, N
Citation: S. Shimomura et al., Strained InGaAs AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1127-1130
GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Authors: Tatsuoka, Y Kamimoto, H Kitano, Y Kitada, T Shimomura, S Hiyamizu, S
Citation: Y. Tatsuoka et al., GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1155-1157
L-2-hydroxyglutaric aciduria: two Japanese adult cases in one family
Authors: Fujitake, J Ishikama, Y Fujii, H Nishimura, K Hayakawa, K Inoue, F Terada, N Okochi, M Tatsuoka, Y
Citation: J. Fujitake et al., L-2-hydroxyglutaric aciduria: two Japanese adult cases in one family, J NEUROL, 246(5), 1999, pp. 378-382
Cerebral infarction after deflation of a pneumatic tourniquet during totalknee replacement
Authors: Ogino, Y Tatsuoka, Y Matsuoka, R Nakamura, K Nakamura, H Tanaka, C Kamiya, N Matsuoka, Y
Citation: Y. Ogino et al., Cerebral infarction after deflation of a pneumatic tourniquet during totalknee replacement, ANESTHESIOL, 90(1), 1999, pp. 297-298
Risultati: 1-8 |