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Results: 1-9 |
Results: 9
Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors
Authors: Neu, G Teisseire, M Lemasson, P Lahreche, H Grandjean, N Semond, F Beaumont, B Grzegory, I Porowski, S Triboulet, R
Citation: G. Neu et al., Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors, PHYSICA B, 302, 2001, pp. 39-53
Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers
Authors: Tournie, E Neu, G Teisseire, M Faurie, JP Pelletier, H Theys, B
Citation: E. Tournie et al., Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers, PHYS REV B, 62(19), 2000, pp. 12868-12874
Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy
Authors: Neu, G Tournie, E Morhain, C Teisseire, M Faurie, JP
Citation: G. Neu et al., Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 15789-15796
Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N
Authors: Tournie, E Pelletier, H Neu, G Theys, B Lusson, A Teisseire, M Chauvet, C Faurie, JP
Citation: E. Tournie et al., Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N, J CRYST GR, 214, 2000, pp. 507-510
Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy inspace ultra-vacuum
Authors: Freundlich, A Horton, C Vilela, MF Sterling, M Ignatiev, A Neu, G Teisseire, M
Citation: A. Freundlich et al., Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy inspace ultra-vacuum, J CRYST GR, 209(2-3), 2000, pp. 435-439
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
Authors: Neu, G Teisseire, M Frayssinet, E Knap, W Sadowski, ML Witowski, AM Pakula, K Leszczynski, M Prystawko, P
Citation: G. Neu et al., Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1348-1350
GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
Authors: Khan, MA Yang, JW Knap, W Frayssinet, E Hu, X Simin, G Prystawko, P Leszczynski, M Grzegory, I Porowski, S Gaska, R Shur, MS Beaumont, B Teisseire, M Neu, G
Citation: Ma. Khan et al., GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates, APPL PHYS L, 76(25), 2000, pp. 3807-3809
Near-band gap selective photoluminescence in wurtzite GaN
Authors: Neu, G Teisseire, M Beaumont, B Lahreche, H Gibart, P
Citation: G. Neu et al., Near-band gap selective photoluminescence in wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 79-83
Donor-acceptor-pair spectroscopy of GaAs grown in space ultravacuum
Authors: Neu, G Teisseire, M Freundlich, A Horton, C Ignatiev, A
Citation: G. Neu et al., Donor-acceptor-pair spectroscopy of GaAs grown in space ultravacuum, APPL PHYS L, 74(22), 1999, pp. 3341-3343
Risultati: 1-9 |