AAAAAA

   
Results: 1-10 |
Results: 10
Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers
Authors: Alperovich, VL Bolkhovityanov, YB Chikichev, SI Paulish, AG Terekhov, AS Yaroshevich, AS
Citation: Vl. Alperovich et al., Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers, SEMICONDUCT, 35(9), 2001, pp. 1054-1062
Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111)
Authors: Alperovich, VL Tereshchenko, OE Litvinov, AN Terekhov, AS
Citation: Vl. Alperovich et al., Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111), APPL SURF S, 175, 2001, pp. 175-180
Energy distributions of electrons emitted from GaAs(Cs,O)
Authors: Orlov, DA Hoppe, M Weigel, U Schwalm, D Terekhov, AS Wolf, A
Citation: Da. Orlov et al., Energy distributions of electrons emitted from GaAs(Cs,O), APPL PHYS L, 78(18), 2001, pp. 2721-2723
Preparation and performance of transmission-mode GaAs photocathodes as sources for cold dc electron beams
Authors: Pastuszka, S Hoppe, M Kratzmann, D Schwalm, D Wolf, A Jaroshevich, AS Kosolobov, SN Orlov, DA Terekhov, AS
Citation: S. Pastuszka et al., Preparation and performance of transmission-mode GaAs photocathodes as sources for cold dc electron beams, J APPL PHYS, 88(11), 2000, pp. 6788-6800
Elastic and inelastic tunneling of photoelectrons from the dimensional quantization band at a p(+)-GaAs-(Cs,O) interface into vacuum
Authors: Orlov, DA Andreev, VE Terekhov, AS
Citation: Da. Orlov et al., Elastic and inelastic tunneling of photoelectrons from the dimensional quantization band at a p(+)-GaAs-(Cs,O) interface into vacuum, JETP LETTER, 71(4), 2000, pp. 151-154
Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications
Authors: Alperovich, VL Bolkhovityanov, YB Chikichev, SI Jaroshevich, AS Paulish, AG Terekhov, AS
Citation: Vl. Alperovich et al., Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications, OPTOEL PROP, 9, 2000, pp. 651-726
Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field
Authors: Al'perovich, VL Terekhov, AS Tkachenko, VA Tkachenko, OA Moshegov, NT Toropov, AI Yaroshevich, AS
Citation: Vl. Al'Perovich et al., Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field, PHYS SOL ST, 41(1), 1999, pp. 143-147
Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
Authors: Tereshchenko, OE Chikichev, SI Terekhov, AS
Citation: Oe. Tereshchenko et al., Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces, J VAC SCI A, 17(5), 1999, pp. 2655-2662
Atomic structure and electronic properties of HCl-isopropanol treated and vacuum annealed GaAs(100) surface
Authors: Tereshchenko, OE Chikichev, SI Terekhov, AS
Citation: Oe. Tereshchenko et al., Atomic structure and electronic properties of HCl-isopropanol treated and vacuum annealed GaAs(100) surface, APPL SURF S, 142(1-4), 1999, pp. 75-80
Cs/GaAs(100) surface: two-dimensional metal or Hubbard insulator?
Authors: Tereshchenko, OE Al'perovich, VL Terekhov, AS Litvinov, AN
Citation: Oe. Tereshchenko et al., Cs/GaAs(100) surface: two-dimensional metal or Hubbard insulator?, JETP LETTER, 70(8), 1999, pp. 550-555
Risultati: 1-10 |