ACNP - Italian Periodicals Catalogue

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Results: 1-16 |

Results: 16

Near band-edge transitions in AlN thin films grown on different substrates

Authors: Teofilov, N Thonke, K Sauer, R Ebling, DG Kirste, L Benz, KW

Citation: N. Teofilov et al., Near band-edge transitions in AlN thin films grown on different substrates, DIAM RELAT, 10(3-7), 2001, pp. 1300-1303

Polymer masks on semiconductors: A novel way to nanostructures

Authors: Haupt, M Miller, S Bitzer, K Thonke, K Sauer, R Spatz, JP Mossmer, S Hartmann, C Moller, M

Citation: M. Haupt et al., Polymer masks on semiconductors: A novel way to nanostructures, PHYS ST S-B, 224(3), 2001, pp. 867-870

Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures

Authors: Konle, J Presting, H Kibbel, H Thonke, K Sauer, R

Citation: J. Konle et al., Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures, SOL ST ELEC, 45(11), 2001, pp. 1921-1925

Optical properties and ordering of AlxGa1-xN MBE-layers

Authors: Ebling, DG Kirste, L Benz, KW Teofilov, N Thonke, K Sauer, R

Citation: Dg. Ebling et al., Optical properties and ordering of AlxGa1-xN MBE-layers, J CRYST GR, 227, 2001, pp. 453-457

Electron-hole drops in synthetic diamond

Authors: Thonke, K Schliesing, R Teofilov, N Zacharias, H Sauer, R Zaitsev, AM Kanda, H Anthony, TR

Citation: K. Thonke et al., Electron-hole drops in synthetic diamond, DIAM RELAT, 9(3-6), 2000, pp. 428-431

Novel mid-infrared silicon/germanium detector concepts

Authors: Presting, H Konle, J Hepp, M Kibbel, H Thonke, K Sauer, R Corbin, E Jaros, M

Citation: H. Presting et al., Novel mid-infrared silicon/germanium detector concepts, OPT ENG, 39(10), 2000, pp. 2624-2641

Irradiation-induced Ge multilayer growth from GeH4 on Si(111)

Authors: Braun, J Haupt, M Thonke, K Sauer, R Rauscher, H Behm, RJ

Citation: J. Braun et al., Irradiation-induced Ge multilayer growth from GeH4 on Si(111), SURF SCI, 454, 2000, pp. 811-817

Revised fine splitting of excitons in diamond

Authors: Sauer, R Sternschulte, H Wahl, S Thonke, K Anthony, TR

Citation: R. Sauer et al., Revised fine splitting of excitons in diamond, PHYS REV L, 84(18), 2000, pp. 4172-4175

High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

Authors: Kornitzer, G Grehl, M Thonke, K Sauer, R Kirchner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S

Citation: G. Kornitzer et al., High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers, PHYSICA B, 274, 1999, pp. 66-69

High-resolution photoluminescence and reflectance spectra of homoepitaxialGaN layers

Authors: Kornitzer, K Ebner, T Grehl, M Thonke, K Sauer, R Kirchner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S

Citation: K. Kornitzer et al., High-resolution photoluminescence and reflectance spectra of homoepitaxialGaN layers, PHYS ST S-B, 216(1), 1999, pp. 5-9

Photoluminescence and reflectance spectroscopy of excitonic transitions inhigh-quality homoepitaxial GaN films

Authors: Kornitzer, K Ebner, T Thonke, K Sauer, R Krichner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S

Citation: K. Kornitzer et al., Photoluminescence and reflectance spectroscopy of excitonic transitions inhigh-quality homoepitaxial GaN films, PHYS REV B, 60(3), 1999, pp. 1471-1473

Optical evidence for 630-meV phosphorus donor in synthetic diamond

Authors: Sternschulte, H Thonke, K Sauer, R Koizumi, S

Citation: H. Sternschulte et al., Optical evidence for 630-meV phosphorus donor in synthetic diamond, PHYS REV B, 59(20), 1999, pp. 12924-12927

Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

Authors: Dietrich, R Vescan, A Wieszt, A Leier, H Boutros, KS Redwing, JM Kornitzer, K Freitag, R Ebner, T Thonke, K

Citation: R. Dietrich et al., Effect of illumination on the electrical characteristics of AlGaN/GaN FETs, PHYS ST S-A, 176(1), 1999, pp. 209-212

Near-band-edge luminescence studies of diamond doped during CVD growth or by ion implantation

Authors: Sternschulte, H Thonke, K Sauer, R

Citation: H. Sternschulte et al., Near-band-edge luminescence studies of diamond doped during CVD growth or by ion implantation, PHYS ST S-A, 172(1), 1999, pp. 37-48

AlN on sapphire and on SiC: CL and Raman study

Authors: Kornitzer, K Limmer, W Thonke, K Sauer, R Ebling, DG Steinke, L Benz, KW

Citation: K. Kornitzer et al., AlN on sapphire and on SiC: CL and Raman study, J CRYST GR, 202, 1999, pp. 441-443

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Kornitzer, K Ebner, T Thonke, K Sauer, R Prystawko, P Leszczynski, M Grzegory, I Porowski, S

Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100

Risultati: 1-16 |