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Results:
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Results: 15
Authors:
Rack, MJ
Thornton, TJ
Ferry, DK
Roberts, J
Westhoff, RC
Robinson, M
Citation: Mj. Rack et al., Cryogenic field effect transistors using strained silicon quantum wells inSi : SiGe heterostructures grown by APCVD, MAT SCI E B, 87(3), 2001, pp. 277-281
Authors:
Thornton, TJ
Citation: Tj. Thornton, Schottky junction transistor-micropower circuits at GHz frequencies, IEEE ELEC D, 22(1), 2001, pp. 38-40
Authors:
Kanjanachuchai, S
Thornton, TJ
Fernandez, JM
Ahmed, H
Citation: S. Kanjanachuchai et al., Coulomb blockade in strained-Si nanowires on leaky virtual substrates, SEMIC SCI T, 16(2), 2001, pp. 72-76
Authors:
Rack, MJ
Thornton, TJ
Ferry, DK
Huffman, J
Westhoff, R
Citation: Mj. Rack et al., Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications, SOL ST ELEC, 45(7), 2001, pp. 1199-1203
Authors:
Thornton, TJ
Citation: Tj. Thornton, Physics and applications of the Schottky junction transistor, IEEE DEVICE, 48(10), 2001, pp. 2421-2427
Authors:
Khoury, M
Gunther, A
Milicic, S
Rack, J
Goodnick, SM
Vasileska, D
Thornton, TJ
Ferry, DK
Citation: M. Khoury et al., Single-electron quantum dots in silicon MOS structures, APPL PHYS A, 71(4), 2000, pp. 415-421
Authors:
Rack, MJ
Thornton, TJ
Ferry, DK
Citation: Mj. Rack et al., Quantum wires in strained silicon quantum wells on tilted substrates, SUPERLATT M, 28(5-6), 2000, pp. 369-376
Authors:
Rack, MJ
Thornton, TJ
Ferry, DK
Roberts, J
Westhoff, R
Citation: Mj. Rack et al., Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures, SEMIC SCI T, 15(3), 2000, pp. 291-296
Authors:
Thornton, TJ
Ge, F
Andresen, A
Pivin, D
Bird, J
Ferry, DK
Citation: Tj. Thornton et al., Minigaps in strained silicon quantum wells on tilted substrates, J VAC SCI B, 17(4), 1999, pp. 1757-1760
Authors:
Rahman, F
Thornton, TJ
Citation: F. Rahman et Tj. Thornton, Coupling of superconductivity with low-dimensional electron systems in mesoscopic geometries, SUPERLATT M, 25(5-6), 1999, pp. 767-774
Authors:
Shin, DH
Becker, CE
Harris, JJ
Fernandez, JM
Woods, NJ
Thornton, TJ
Maude, DK
Portal, JC
Citation: Dh. Shin et al., Variable-range hopping transport in modulation-doped n-channel Si/Si1-xGexquantum well structures, SEMIC SCI T, 14(9), 1999, pp. 762-767
Authors:
Rahman, F
Thornton, TJ
Gallagher, BL
Stradling, RA
Citation: F. Rahman et al., Boundary scattering in wet-etched InAs GaSb heterostructure wires: with and without magnetic field, SEMIC SCI T, 14(5), 1999, pp. 478-483
Authors:
Gunther, AD
Goodnick, SM
Khoury, M
Krishnasamy, AE
Rack, MJ
Thornton, TJ
Citation: Ad. Gunther et al., Transport in split gate MOS quantum dot structures, MICROEL ENG, 47(1-4), 1999, pp. 123-125
Authors:
Thornton, TJ
Hirakawa, K
Wybourne, MN
Citation: Tj. Thornton et al., Introduction: Special issue on single electronics, INT J ELECT, 86(5), 1999, pp. 509-509
Authors:
Yeoh, JC
Green, PW
Thornton, TJ
Kaya, S
Fobelets, K
Fernandez, JM
Citation: Jc. Yeoh et al., MOS gated Si : SiGe quantum wells formed by anodic oxidation, SEMIC SCI T, 13(12), 1998, pp. 1442-1445
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