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Results: 1-13 |
Results: 13
Faceting transition in epitaxial growth of dilute GaNAs films on GaAs
Authors: Adamcyk, M Tixier, S Ruck, BJ Schmid, JH Tiedje, T Fink, V Jeffries, M Karaiskaj, D Kavanagh, KL Thewalt, M
Citation: M. Adamcyk et al., Faceting transition in epitaxial growth of dilute GaNAs films on GaAs, J VAC SCI B, 19(4), 2001, pp. 1417-1421
Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films
Authors: Ballestad, A Ruck, BJ Adamcyk, M Pinnington, T Tiedje, T
Citation: A. Ballestad et al., Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films, PHYS REV L, 86(11), 2001, pp. 2377-2380
Smoothing of textured GaAs surfaces during molecular beam epitaxy growth
Authors: Adamcyk, M Ballestad, A Pinnington, T Tiedje, T Davies, M Feng, Y
Citation: M. Adamcyk et al., Smoothing of textured GaAs surfaces during molecular beam epitaxy growth, J VAC SCI B, 18(3), 2000, pp. 1488-1492
Effect of the starting surface on the morphology of MBE-grown GaAs
Authors: Adamcyk, M Pinnington, T Ballestad, A Tiedje, T
Citation: M. Adamcyk et al., Effect of the starting surface on the morphology of MBE-grown GaAs, MAT SCI E B, 75(2-3), 2000, pp. 153-156
Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers
Authors: Sfigakis, F Paddon, P Pacradouni, V Adamcyk, M Nicoll, C Cowan, AR Tiedje, T Young, JF
Citation: F. Sfigakis et al., Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers, J LIGHTW T, 18(2), 2000, pp. 199-202
The role of tumor necrosis factor in the development of multiple organ failure in a murine model
Authors: Burdon, D Tiedje, T Pfeffer, K Vollmer, E Zabel, P
Citation: D. Burdon et al., The role of tumor necrosis factor in the development of multiple organ failure in a murine model, CRIT CARE M, 28(6), 2000, pp. 1962-1967
Multilevel infrared coupling of excitons in quantum-well semiconductors
Authors: Sadeghi, SM Meyer, J Tiedje, T Beaudoin, M
Citation: Sm. Sadeghi et al., Multilevel infrared coupling of excitons in quantum-well semiconductors, IEEE J Q EL, 36(11), 2000, pp. 1267-1271
Growth of InP islands on LaF3/InP(111)B heterostructures by molecular beamepitaxy
Authors: Ritchie, S Beaudoin, M Tiedje, T Pinnington, T
Citation: S. Ritchie et al., Growth of InP islands on LaF3/InP(111)B heterostructures by molecular beamepitaxy, JPN J A P 2, 38(2B), 1999, pp. L192-L194
Coherent soft x-ray scattering from InP islands on a semiconductor substrate
Authors: Adamcyk, M Nicoll, C Pinnington, T Tiedje, T Eisebitt, S Karl, A Scherer, R Eberhardt, W
Citation: M. Adamcyk et al., Coherent soft x-ray scattering from InP islands on a semiconductor substrate, J VAC SCI B, 17(4), 1999, pp. 1728-1732
Surface roughness and resonant scattering effects in soft X-ray speckle from random semiconductor interfaces
Authors: Adamcyk, M Eisebitt, S Karl, A Nicoll, C Pinnington, T Scherer, R Tiedje, T Eberhardt, W
Citation: M. Adamcyk et al., Surface roughness and resonant scattering effects in soft X-ray speckle from random semiconductor interfaces, SURF REV L, 6(6), 1999, pp. 1121-1128
Electron momentum spectroscopy of surfaces
Authors: Tixier, S Zheng, Y Tiedje, T Cooper, G Brion, CE
Citation: S. Tixier et al., Electron momentum spectroscopy of surfaces, SURF REV L, 6(5), 1999, pp. 579-584
Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering
Authors: Pinnington, T Levy, Y MacKenzie, JA Tiedje, T
Citation: T. Pinnington et al., Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering, PHYS REV B, 60(23), 1999, pp. 15901-15909
In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss
Authors: Beaudoin, M Adamcyk, M Levy, Y MacKenzie, JA Ritchie, S Tiedje, T Gelbart, Z Giesen, U Kelson, I
Citation: M. Beaudoin et al., In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss, J CRYST GR, 202, 1999, pp. 26-30
Risultati: 1-13 |