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Results: 1-7 |
Results: 7
Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors
Authors: Kleiman, RN O'Malley, ML Baumann, FH Garno, JP Timp, GL
Citation: Rn. Kleiman et al., Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors, J VAC SCI B, 18(4), 2000, pp. 2034-2038
Gate oxide reliability projection to the sub-2 nm regime
Authors: Weir, BE Alam, MA Bude, JD Silverman, PJ Ghetti, A Baumann, F Diodato, P Monroe, D Sorsch, T Timp, GL Ma, Y Brown, MM Hamad, A Hwang, D Mason, P
Citation: Be. Weir et al., Gate oxide reliability projection to the sub-2 nm regime, SEMIC SCI T, 15(5), 2000, pp. 455-461
Progress toward a 30 nm silicon metal-oxide-semiconductor gate technology
Authors: Tennant, DM Timp, GL Ocola, LE Green, M Sorsch, T Kornblit, A Klemens, F Kleiman, R Kim, Y Timp, W
Citation: Dm. Tennant et al., Progress toward a 30 nm silicon metal-oxide-semiconductor gate technology, J VAC SCI B, 17(6), 1999, pp. 3158-3163
Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS
Authors: Green, ML Sorsch, TW Timp, GL Muller, DA Weir, BE Silverman, PJ Moccio, SV Kim, YO
Citation: Ml. Green et al., Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS, MICROEL ENG, 48(1-4), 1999, pp. 25-30
Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy
Authors: Donnelly, VM Klemens, FP Sorsch, TW Timp, GL Baumann, FH
Citation: Vm. Donnelly et al., Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy, APPL PHYS L, 74(9), 1999, pp. 1260-1262
Electrical simulation of scanning capacitance microscopy imaging of the pnjunction with semiconductor probe tips
Authors: O'Malley, ML Timp, GL Timp, W Moccio, SV Garno, JP Kleiman, RN
Citation: Ml. O'Malley et al., Electrical simulation of scanning capacitance microscopy imaging of the pnjunction with semiconductor probe tips, APPL PHYS L, 74(24), 1999, pp. 3672-3674
Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation
Authors: O'Malley, ML Timp, GL Moccio, SV Garno, JP Kleiman, RN
Citation: Ml. O'Malley et al., Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation, APPL PHYS L, 74(2), 1999, pp. 272-274
Risultati: 1-7 |