Authors:
Donaton, RA
Coenegrachts, B
Maenhoudt, M
Pollentier, I
Struyf, H
Vanhaelemeersch, S
Vos, I
Meuris, M
Fyen, W
Beyer, G
Tokei, Z
Stucchi, M
Vervoort, I
De Roest, D
Maex, K
Citation: Ra. Donaton et al., Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures, MICROEL ENG, 55(1-4), 2001, pp. 277-283
Authors:
Tokei, Z
Erdelyi, Z
Girardeaux, C
Rolland, A
Citation: Z. Tokei et al., Effect of sulphur content and pre-annealing treatments on nickel grain-boundary diffusion in high-purity copper, PHIL MAG A, 80(5), 2000, pp. 1075-1083
Citation: Z. Tokei et al., Initial stages of oxidation of a 9CrMoV-steel: role of segregation and martensite laths, APPL SURF S, 165(1), 2000, pp. 23-33
Authors:
Girardeaux, C
Tokei, Z
Clugnet, G
Rolland, A
Citation: C. Girardeaux et al., First stages in the formation of ultra thin nickel layers on Cu(111) and Ge(111) and dissolution: an AES comparative study, APPL SURF S, 162, 2000, pp. 208-212
Citation: Z. Tokei et al., Grain-boundary diffusion in B2 intermetallic compounds: Effect of orderingon diffusion in the Fe3Al and FeCo compounds, ACT MATER, 47(4), 1999, pp. 1371-1378