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Results:
1-8
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Results: 8
Authors:
Martini, S
Quivy, AA
Ugarte, D
Lange, C
Richter, W
Tokranov, VE
Citation: S. Martini et al., Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxyon GaAs(001) vicinal surfaces, J CRYST GR, 227, 2001, pp. 46-50
Authors:
Astakhov, GV
Kochereshko, VP
Vasil'ev, DG
Evtikhiev, VP
Tokranov, VE
Kudryashov, IV
Mikhailov, GV
Citation: Gv. Astakhov et al., Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates, SEMICONDUCT, 33(9), 1999, pp. 988-990
Authors:
Ankudinov, AV
Evtikhiev, VP
Tokranov, VE
Ulin, VP
Titkov, AN
Citation: Av. Ankudinov et al., Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers, SEMICONDUCT, 33(5), 1999, pp. 555-558
Authors:
Evtikhiev, VP
Kotel'nikov, EY
Kudryashov, IV
Tokranov, VE
Faleev, NN
Citation: Vp. Evtikhiev et al., Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry, SEMICONDUCT, 33(5), 1999, pp. 590-593
Authors:
Bolotov, LN
Nakamura, A
Evtikhiev, VP
Tokranov, VE
Titkov, AN
Citation: Ln. Bolotov et al., Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective as layer, SURF INT AN, 27(5-6), 1999, pp. 533-536
Authors:
Evtikhiev, VP
Tokranov, VE
Kryganovskii, AK
Boiko, AM
Suris, RA
Titkov, AN
Citation: Vp. Evtikhiev et al., Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] direction, J CRYST GR, 202, 1999, pp. 1154-1157
Authors:
Kudryashov, IV
Evtikhiev, VP
Tokranov, VE
Kotel'nikov, EY
Kryganovskii, AK
Titkov, AN
Citation: Iv. Kudryashov et al., Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots, J CRYST GR, 202, 1999, pp. 1158-1160
Authors:
Evtikhiev, VP
Kudryashov, IV
Kotel'nikov, EY
Tokranov, VE
Titkov, AN
Tarasov, IS
Alferov, ZI
Citation: Vp. Evtikhiev et al., Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinalGaAs(001) surfaces misoriented in the [010] direction in the active region, SEMICONDUCT, 32(12), 1998, pp. 1323-1327
Risultati:
1-8
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