Authors: Anan, T Yamada, M Nishi, K Kurihara, K Tokutome, K Kamei, A Sugou, S

Citation: T. Anan et al., Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs, ELECTR LETT, 37(9), 2001, pp. 566-567

Authors: Yamada, M Anan, T Tokutome, K Kamei, A Nishi, K Sugou, S

Citation: M. Yamada et al., Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates, IEEE PHOTON, 12(7), 2000, pp. 774-776

Authors: Yamada, M Anan, T Kurihara, K Nishi, K Tokutome, K Kamei, A Sugou, S

Citation: M. Yamada et al., Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates, ELECTR LETT, 36(7), 2000, pp. 637-638

Authors: Anan, T Nishi, K Tokutome, K Sugou, S

Citation: T. Anan et al., Band line-up of InAsP/InAlGaAs quantum well, JPN J A P 1, 38(12A), 1999, pp. 6640-6644

Authors: Yamada, M Anan, T Tokutome, K Sugou, S

Citation: M. Yamada et al., High-temperature characteristics of 1.3-mu m InAsP-InAlGaAs ridge waveguide laser, IEEE PHOTON, 11(2), 1999, pp. 164-166

Authors: Anan, T Yamada, M Tokutome, K Sugou, S Nishi, K Kamei, A

Citation: T. Anan et al., Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers, ELECTR LETT, 35(11), 1999, pp. 903-904