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Results:
1-7
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Results: 7
Authors:
Seaford, ML
Tomich, DH
Eyink, KG
Grazulis, L
Mahalingham, K
Yang, Z
Wang, WI
Citation: Ml. Seaford et al., Comparison of GaAs grown on standard Si (511) and compliant SOI (511), J ELEC MAT, 29(7), 2000, pp. 906-908
Authors:
Tomich, DH
Eyink, KG
Grazulis, L
Brown, GL
Szmulowicz, F
Mahalingam, K
Seaford, ML
Kuo, CH
Hwang, WY
Lin, CH
Citation: Dh. Tomich et al., Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates, J ELEC MAT, 29(7), 2000, pp. 940-943
Authors:
Grazulis, L
Kelly, DL
Walker, DE
Tomich, DH
Eyink, KG
Lampert, WV
Citation: L. Grazulis et al., Comparison of nanomachined III-V semiconductor substrates, J VAC SCI B, 17(4), 1999, pp. 1852-1855
Authors:
Seaford, ML
Solomon, JS
Tomich, DH
Eyink, KG
Citation: Ml. Seaford et al., The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices, J ELEC MAT, 28(8), 1999, pp. 955-958
Authors:
Seaford, ML
Hesse, PJ
Tomich, DH
Eyink, KG
Citation: Ml. Seaford et al., Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates, J ELEC MAT, 28(7), 1999, pp. 878-880
Authors:
Solomon, JS
Petry, L
Tomich, DH
Citation: Js. Solomon et al., Optimizing GaSb(111) and GaSb(001) surfaces for epitaxial film growth, THIN SOL FI, 344, 1999, pp. 500-503
Authors:
Tomich, DH
Mitchel, WC
Chow, P
Tu, CW
Citation: Dh. Tomich et al., Study of interfaces in GaInSb InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping, J CRYST GR, 202, 1999, pp. 868-871
Risultati:
1-7
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