Authors:
Mock, P
Booker, GR
Mason, NJ
Nicholas, RJ
Aphandery, E
Topuria, T
Browning, ND
Citation: P. Mock et al., MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL, MAT SCI E B, 80(1-3), 2001, pp. 112-115
Authors:
Mock, P
Topuria, T
Browning, ND
Titova, L
Dobrowolska, M
Lee, S
Furdyna, JK
Citation: P. Mock et al., Self-ordered CdSe quantum dots in ZnSe and (Zn,Mn)Se matrices assessed by transmission electron microscopy and photoluminescence spectroscopy, J ELEC MAT, 30(6), 2001, pp. 748-755
Authors:
Browning, ND
Arslan, I
Ito, Y
James, EM
Klie, RF
Moeck, P
Topuria, T
Xin, Y
Citation: Nd. Browning et al., Application of atomic scale STEM techniques to the study of interfaces anddefects in materials, J ELEC MICR, 50(3), 2001, pp. 205-218
Authors:
Mock, P
Topuria, T
Browning, ND
Booker, GR
Mason, NJ
Nicholas, RJ
Dobrowolska, M
Lee, S
Furdyna, JK
Citation: P. Mock et al., Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots, APPL PHYS L, 79(7), 2001, pp. 946-948
Citation: T. Topuria et al., Direct atomic scale characterization of interfaces and doping layers in field-effect transistors, APPL PHYS L, 79(1), 2001, pp. 132-134