Authors: Sugahara, T Sakai, S Lachab, M Fareed, RSQ Tottori, S Wang, T

Citation: T. Sugahara et al., Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates, PHYS ST S-B, 216(1), 1999, pp. 273-277

Authors: Fareed, RSQ Tottori, S Inaoka, T Nishino, K Sakai, S

Citation: Rsq. Fareed et al., Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, J CRYST GR, 207(3), 1999, pp. 174-178

Authors: Fareed, RSQ Tottori, S Nishino, K Sakai, S

Citation: Rsq. Fareed et al., Surface morphology studies on sublimation grown GaN by atomic force microscopy, J CRYST GR, 200(3-4), 1999, pp. 348-352

Authors: Hao, M Mahanty, S Sugahara, T Morishima, Y Takenaka, H Wang, J Tottori, S Nishino, K Naoi, Y Sakai, S

Citation: M. Hao et al., Configuration of dislocations in lateral overgrowth GaN films, J APPL PHYS, 85(9), 1999, pp. 6497-6501

Authors: Wang, J Fareed, RSQ Hao, M Mahanty, S Tottori, S Ishikawa, Y Sugahara, T Morishima, Y Nishino, K Osinski, M Sakai, S

Citation: J. Wang et al., Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method, J APPL PHYS, 85(3), 1999, pp. 1895-1899

Authors: Hao, M Mahanty, S Fareed, RSQ Tottori, S Nishino, K Sakai, S

Citation: M. Hao et al., Infrared properties of bulk GaN, APPL PHYS L, 74(19), 1999, pp. 2788-2790