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Results: 1-9 |
Results: 9
Annealing and recrystallization of hydrogenated amorphous silicon - art. no. 075403
Authors: Britton, DT Hempel, A Harting, M Kogel, G Sperr, P Triftshauser, W Arendse, C Knoesen, D
Citation: Dt. Britton et al., Annealing and recrystallization of hydrogenated amorphous silicon - art. no. 075403, PHYS REV B, 6407(7), 2001, pp. 5403
Hopping transport of positrons in hydrogenated amorphous silicon - art. no. 217401
Authors: Britton, DT Hempel, A Triftshauser, W
Citation: Dt. Britton et al., Hopping transport of positrons in hydrogenated amorphous silicon - art. no. 217401, PHYS REV L, 8721(21), 2001, pp. 7401
Lifetime measurements with a scanning positron microscope - art. no. 067402
Authors: David, A Kogel, G Sperr, P Triftshauser, W
Citation: A. David et al., Lifetime measurements with a scanning positron microscope - art. no. 067402, PHYS REV L, 8706(6), 2001, pp. 7402
Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Weidner, M Frank, T Pensl, G Sperr, P Triftshauser, W Itoh, H
Citation: A. Kawasuso et al., Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy, APPL PHYS L, 79(24), 2001, pp. 3950-3952
Evidence for negatively charged vacancy defects in 6H-SiC after low-energyproton implantation
Authors: Britton, DT Barthe, MF Corbel, C Hempel, A Henry, L Desgardin, P Bauer-Kugelmann, W Kogel, G Sperr, P Triftshauser, W
Citation: Dt. Britton et al., Evidence for negatively charged vacancy defects in 6H-SiC after low-energyproton implantation, APPL PHYS L, 78(9), 2001, pp. 1234-1236
Structural characterisation of hydrogenated a-Si using slow positron beam techniques
Authors: Britton, DT Hempel, A Knoesen, D Bauer-Kugelmann, W Triftshauser, W
Citation: Dt. Britton et al., Structural characterisation of hydrogenated a-Si using slow positron beam techniques, NUCL INST B, 164, 2000, pp. 1010-1015
Positron annihilation in near-surface regions and layered structures
Authors: Triftshauser, W
Citation: W. Triftshauser, Positron annihilation in near-surface regions and layered structures, VACUUM, 58(1), 2000, pp. 33-44
Defect identification in GaAs grown at low temperatures by positron annihilation
Authors: Gebauer, J Borner, F Krause-Rehberg, R Staab, TEM Bauer-Kugelmann, W Kogel, G Triftshauser, W Specht, P Lutz, RC Weber, ER Luysberg, M
Citation: J. Gebauer et al., Defect identification in GaAs grown at low temperatures by positron annihilation, J APPL PHYS, 87(12), 2000, pp. 8368-8379
High intense positron beam at the new Munich research reactor FRM-II
Authors: Hugenschmidt, C Kogel, G Schreckenbach, K Sperr, P Springer, M Strasser, B Triftshauser, W
Citation: C. Hugenschmidt et al., High intense positron beam at the new Munich research reactor FRM-II, APPL SURF S, 149(1-4), 1999, pp. 7-10
Risultati: 1-9 |