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Results: 1-14 |
Results: 14
Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices
Authors: Aperathitis, E Cengher, D Kayambaki, M Androulidaki, M Deligeorgis, G Tsagaraki, K Hatzopoulous, Z Georgakilas, A
Citation: E. Aperathitis et al., Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices, MAT SCI E B, 80(1-3), 2001, pp. 77-80
Selective etching during the electrochemical C-V profiling of PM-HEMTs
Authors: Kayambaki, M Tsagaraki, K Lagadas, M Panayotatos, P
Citation: M. Kayambaki et al., Selective etching during the electrochemical C-V profiling of PM-HEMTs, MAT SCI E B, 80(1-3), 2001, pp. 164-167
Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Authors: Amimer, K Georgakilas, A Androulidaki, M Tsagaraki, K Pavelescu, M Mikroulis, S Constantinidis, G Arbiol, J Peiro, F Cornet, A Calamiotou, M Kuzmik, J Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308
Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
Authors: Kuznetsov, N Tsagaraki, K Bauman, D Morozov, A Nikitina, I Ivantsov, V Zekentes, K
Citation: N. Kuznetsov et al., Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 345-347
Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC
Authors: Vassilevski, K Zekentes, K Tsagaraki, K Constantinidis, G Nikitina, I
Citation: K. Vassilevski et al., Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 370-373
Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates
Authors: Calamiotou, M Chrysanthakopoulos, N Lioutas, C Tsagaraki, K Georgakilas, A
Citation: M. Calamiotou et al., Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates, J CRYST GR, 227, 2001, pp. 98-103
Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters
Authors: Georgakilas, A Tsagaraki, K Makarona, E Constantinidis, G Adroulidaki, M Kayambaki, M Aperathitis, E Pelekanos, NT
Citation: A. Georgakilas et al., Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters, MAT SC S PR, 3(5-6), 2000, pp. 511-515
Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
Authors: Kayambaki, M Tsagaraki, K Cimalla, V Zekentes, K Yakimova, R
Citation: M. Kayambaki et al., Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals, J ELCHEM SO, 147(7), 2000, pp. 2744-2748
Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy
Authors: Amimer, K Georgakilas, A Tsagaraki, K Androulidaki, M Cengher, D Toth, L Pecz, B Calamiotou, M
Citation: K. Amimer et al., Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy, APPL PHYS L, 76(18), 2000, pp. 2580-2582
Improvements in Pt-based Schottky contacts to 3C-SiC
Authors: Constantinidis, G Pecz, B Tsagaraki, K Kayambaki, M Michelakis, K
Citation: G. Constantinidis et al., Improvements in Pt-based Schottky contacts to 3C-SiC, MAT SCI E B, 61-2, 1999, pp. 406-410
Surfactant-mediated MBE growth of beta-SiC on Si substrates
Authors: Zekentes, K Tsagaraki, K
Citation: K. Zekentes et K. Tsagaraki, Surfactant-mediated MBE growth of beta-SiC on Si substrates, MAT SCI E B, 61-2, 1999, pp. 559-562
Gastric ulcer bleeding: diagnosis by computed tomography
Authors: Voloudaki, A Tsagaraki, K Mouzas, J Gourtsoyiannis, N
Citation: A. Voloudaki et al., Gastric ulcer bleeding: diagnosis by computed tomography, EUR J RAD, 30(3), 1999, pp. 245-247
Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates
Authors: Georgakilas, A Michelakis, K Kayambaki, M Tsagaraki, K Macarona, E Hatzopoulos, Z Vila, A Becourt, N Peiro, F Cornet, A Chrysanthakopoulos, N Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251
Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP
Authors: Georgakilas, A Tsagaraki, K Harteros, K Hatzopoulos, Z Vila, A Becourt, N Peiro, F Cornet, A Chrysanthakopoulos, N Calamiotou, M
Citation: A. Georgakilas et al., Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP, THIN SOL FI, 336(1-2), 1998, pp. 218-221
Risultati: 1-14 |