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Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806

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Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814

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Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96

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Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440

Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsulnikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D

Citation: Il. Krestnikov et al., Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature, PHYS ST S-B, 216(1), 1999, pp. 511-515