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Results:
1-16
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Results: 16
Authors:
Biber, M
Cakar, M
Turut, A
Citation: M. Biber et al., The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes, J MAT S-M E, 12(10), 2001, pp. 575-579
Authors:
Temircl, C
Bati, B
Saglam, M
Turut, A
Citation: C. Temircl et al., High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process, APPL SURF S, 172(1-2), 2001, pp. 1-7
Authors:
Ayyildiz, E
Temirci, C
Bati, B
Turut, A
Citation: E. Ayyildiz et al., The effect of series resistance on calculation of the interface state density distribution in Schottky diodes, INT J ELECT, 88(6), 2001, pp. 625-633
Authors:
Bati, B
Nuhoglu, C
Saglam, M
Ayyildiz, E
Turut, A
Citation: B. Bati et al., On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact, PHYS SCR, 61(2), 2000, pp. 209-212
Authors:
Abey, B
Onganer, Y
Saglam, M
Efeoglu, H
Turut, A
Yogurtcu, YK
Citation: B. Abey et al., Current-voltage and capacitance-voltage characteristics of metallic polymer/InSe(: Er) Schottky contacts, MICROEL ENG, 51-2, 2000, pp. 689-693
Authors:
Nuhoglu, C
Temirci, C
Bati, B
Biber, M
Turut, A
Citation: C. Nuhoglu et al., Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts, SOL ST COMM, 115(6), 2000, pp. 291-295
Authors:
Cankaya, G
Ucar, N
Turut, A
Citation: G. Cankaya et al., An investigation of I-V characteristics of Au/n-GaAs Schottky diodes afterhydrostatic pressure, PHYS ST S-A, 179(2), 2000, pp. 469-473
Authors:
Cankaya, G
Ucar, N
Turut, A
Citation: G. Cankaya et al., Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure, INT J ELECT, 87(10), 2000, pp. 1171-1176
Authors:
Cetinkara, HA
Saglam, M
Turut, A
Yalcin, N
Citation: Ha. Cetinkara et al., The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes, EPJ-APPL PH, 6(1), 1999, pp. 89-94
Authors:
Smail, A
Leduc, I
Guilhaume, MN
Duche, A
Lafon, B
Ducroix, JP
Turut, A
Baillet, J
Citation: A. Smail et al., Septicemia due to Candida albicans: cerebral, ocular and vertebral localisations: successful treatment with three systemic antifungal agents, J MYCOL MED, 9(3), 1999, pp. 170-172
Authors:
Nuhoglu, C
Saglam, M
Turut, A
Citation: C. Nuhoglu et al., Cr/- and Fe/n-GaAs Schottky diodes: the stable current-voltage characteristic produced by high-temperature annealing, SEMIC SCI T, 14(1), 1999, pp. 114-117
Authors:
Ayyildiz, E
Bati, B
Temirci, C
Turut, A
Citation: E. Ayyildiz et al., Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes, APPL SURF S, 152(1-2), 1999, pp. 57-62
Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes
Authors:
Cankaya, G
Ucar, N
Ayyildiz, E
Efeoglu, H
Turut, A
Tuzemen, S
Yogurtcu, YK
Citation: G. Cankaya et al., Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes, PHYS REV B, 60(23), 1999, pp. 15944-15947
Authors:
Ayyildiz, E
Turut, A
Citation: E. Ayyildiz et A. Turut, The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy n-GaAs Schottky diodes, SOL ST ELEC, 43(3), 1999, pp. 521-527
Authors:
Ayyildiz, E
Turut, A
Tuzemen, S
Citation: E. Ayyildiz et al., Thermal stability of NiTi alloy contacts on n-type liquid encapsulated Czochralski GaAs, SOL ST COMM, 110(8), 1999, pp. 419-423
Authors:
Ayyildiz, E
Saglam, M
Nuhoglu, C
Turut, A
Citation: E. Ayyildiz et al., The effect of thermal annealing on the series resistance of nearly ideal and ideal Ti/n-GaAs Schottky diodes, PHYS SCR, 58(6), 1998, pp. 636-639
Risultati:
1-16
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