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Citation: M. Stadele et al., Tunneling through ultrathin SiO2 gate oxides from microscopic models, J APPL PHYS, 89(1), 2001, pp. 348-363

Authors: Stadele, M Fischer, B Tuttle, BR Hess, K

Citation: M. Stadele et al., Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models, SUPERLATT M, 28(5-6), 2000, pp. 517-524

Authors: Stadele, M Tuttle, BR Hess, K Register, LF

Citation: M. Stadele et al., Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides, SUPERLATT M, 27(5-6), 2000, pp. 405-409

Authors: Tuttle, BR Hess, K Register, LF

Citation: Br. Tuttle et al., Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress, SUPERLATT M, 27(5-6), 2000, pp. 441-445

Authors: Tuttle, BR McMahon, W Hess, K

Citation: Br. Tuttle et al., Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface ofmetal-oxide-semiconductor field effect transistors, SUPERLATT M, 27(2-3), 2000, pp. 229-233

Authors: Van de Walle, CG Tuttle, BR

Citation: Cg. Van De Walle et Br. Tuttle, Microscopic theory of hydrogen in silicon devices, IEEE DEVICE, 47(10), 2000, pp. 1779-1786