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Results:
1-19
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Results: 19
Authors:
NISHIHORI K
KITAURA Y
TANABE Y
MIHARA H
YOSHIMURA M
NITTA T
KAKIUCHI Y
UCHITOMI N
Citation: K. Nishihori et al., A SELF-ALIGNED GATE ALGAAS GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR WITH AN ION-IMPLANTED BURIED-CHANNEL FOR USE IN HIGH-EFFICIENCY POWER-AMPLIFIERS/, JPN J A P 1, 37(6A), 1998, pp. 3200-3204
Authors:
KAWAKYU KK
IKEDA Y
NAGAOKA M
KAMEYAMA A
UCHITOMI N
Citation: Kk. Kawakyu et al., A 2-V OPERATION RESONANT-TYPE T R-SWITCH WITH LOW DISTORTION CHARACTERISTICS FOR 1,9-GHZ PHS/, IEICE transactions on electronics, E81C(6), 1998, pp. 862-867
Authors:
NAGAOKA M
WAKIMOTO H
SESHITA T
KAWAKYU KK
KITAURA Y
KAMEYAMA A
UCHITOMI N
Citation: M. Nagaoka et al., SINGLE LOW 2.4-V SUPPLY OPERATION GAAS POWER MES-FET AMPLIFIER WITH LOW-DISTORTION GAIN-VARIABLE ATTENUATOR FOR 1.9-GHZ PHS APPLICATIONS, IEICE transactions on electronics, E81C(6), 1998, pp. 911-915
Authors:
NAGAOKA M
NAGASAWA H
KAWAKYU KK
HONMYO K
ISHIDA S
KITAURA Y
UCHITOMI N
Citation: M. Nagaoka et al., 0.012-CC MINIATURIZED GAAS P-POCKET POWER MESFET AMPLIFIER OPERATING WITH A SINGLE VOLTAGE SUPPLY FOR PHS APPLICATIONS, IEICE transactions on electronics, E81C(6), 1998, pp. 985-992
Authors:
NISHIHORI K
KITAURA Y
HIROSE M
MIHARA M
NAGAOKA M
UCHITOMI N
Citation: K. Nishihori et al., A SELF-ALIGNED GATE GAAS-MESFET WITH P-POCKET LAYERS FOR HIGH-EFFICIENCY LINEAR POWER-AMPLIFIERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1385-1392
Authors:
NISHIHORI K
ISHIDA K
KITAURA Y
UCHITOMI N
Citation: K. Nishihori et al., THERMAL-ANALYSIS OF GAAS POWER MONOLITHIC MICROWAVE ICS MOUNTED WITH EPOXY ATTACHMENT, IEEE transactions on components, packaging, and manufacturing technology. Part A, 20(2), 1997, pp. 220-224
Authors:
KAMEYAMA A
KAWAKYU KK
IKEDA Y
NAGAOKA M
ISHIDA K
NITTA T
YOSHIMURA M
KITAURA Y
UCHITOMI N
Citation: A. Kameyama et al., A RESONANT-TYPE GAAS-SWITCH-IC WITH LOW DISTORTION CHARACTERISTICS FOR 1.9-GHZ-PHS, IEICE transactions on electronics, E80C(6), 1997, pp. 788-793
Authors:
SASAKI T
OTAKA S
MAEDA T
UMEDA T
NISHIHORI K
KAMEYAMA A
HIROSE M
KITAURA Y
UCHITOMI N
Citation: T. Sasaki et al., GATE CURRENT CONTROL METHOD BY PULL-DOWN FETS FOR 0-28-DB GAAS VARIABLE ATTENUATOR IN DIRECT-CONVERSION MODULATOR-IC FOR 1.9-GHZ-PHS, IEICE transactions on electronics, E80C(6), 1997, pp. 794-799
Authors:
NISHIHORI K
KAMEYAMA A
KITAURA Y
TANABE Y
MIHARA M
YOSHIMURA M
HIROSE M
UCHITOMI N
Citation: K. Nishihori et al., A BURIED-CHANNEL SELF-ALIGNED GAAS-MESFET WITH HIGH POWER-EFFICIENCY AND LOW NOISE-FIGURE FOR 1.9-GHZ SINGLE-CHIP FRONT-END MMICS, IEICE transactions on electronics, E80C(12), 1997, pp. 1586-1591
Authors:
TSURUMI H
MAEDA T
TANIMOTO H
SUZUKI Y
SAITO M
YOSHIHARA K
ISHIDA K
UCHITOMI N
Citation: H. Tsurumi et al., DESIGN STUDY ON RF STAGE FOR MINIATURE PHS TERMINAL, IEICE transactions on electronics, E79C(5), 1996, pp. 629-635
Authors:
HIROSE M
MATSUZAWA K
MIHARA M
NITTA T
KAMEYAMA A
UCHITOMI N
Citation: M. Hirose et al., A LIGHTLY DOPED DEEP DRAIN GAAS-MESFET STRUCTURE FOR LINEAR-AMPLIFIERS OF PERSONAL HANDY-PHONE SYSTEMS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2062-2067
Authors:
NISHIHORI K
KITAURA Y
NAGAOKA M
TANABE Y
MIHARA M
YOSHIMURA M
HIROSE M
UCHITOMI N
Citation: K. Nishihori et al., BURIED-CHANNEL WNX W SELF-ALIGNED GAAS-MESFET PROCESS WITH SELECTIVELY IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE-LAYERS FOR MMIC APPLICATIONS/, JPN J A P 1, 34(2B), 1995, pp. 1241-1245
Authors:
NAGAOKA M
INOUE T
KAWAKYU K
OBAYASHI S
KAYANO H
TAKAGI E
TANABE Y
YOSHIMURA M
ISHIDA K
KITAURA Y
UCHITOMI N
Citation: M. Nagaoka et al., A MONOLITHIC GAAS LINEAR POWER-AMPLIFIER OPERATING WITH A SINGLE LOW 2.7-V SUPPLY FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION APPLICATIONS, IEICE transactions on electronics, E78C(4), 1995, pp. 424-429
Authors:
KITAURA Y
ISHIDA K
MIZOGUCHI T
UCHITOMI N
MATSUNAGA T
MOCHIZUKI M
NII R
Citation: Y. Kitaura et al., A MECHANISM OF THRESHOLD VOLTAGE CHANGES FOR WNX GATE GAAS-MESFETS INHIGH-TEMPERATURE STORAGE LIFE TESTS, Microelectronics and reliability, 35(12), 1995, pp. 1515-1520
Authors:
NAGAOKA M
ISHIDA K
MATSUNAGA T
NISHIHORI K
HASHIMOTO T
YOSHIMURA M
TANABE Y
MIHARA M
KITAURA Y
UCHITOMI N
Citation: M. Nagaoka et al., REFRACTORY WNX W SELF-ALIGNED GATE GAAS POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEM OPERATING WITH A SINGLE LOW-VOLTAGE SUPPLY/, JPN J A P 1, 33(1B), 1994, pp. 767-770
Authors:
HARA T
MURAKI T
TAKEDA S
UCHITOMI N
KITAURA Y
GAO GB
Citation: T. Hara et al., DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS, JPN J A P 2, 33(10B), 1994, pp. 120001435-120001437
Authors:
HARA T
MURAKI T
TAKEDA S
UCHITOMI N
KITAURA Y
GAO GB
Citation: T. Hara et al., DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS, JPN J A P 2, 33(10B), 1994, pp. 120001435-120001437
Authors:
KITAURA Y
HASHIMOTO T
INOUE T
ISHIDA K
UCHITOMI N
NII R
Citation: Y. Kitaura et al., LONG-TERM RELIABILITY OF PT AND MO DIFFUSION-BARRIERS IN TI-PT-AU ANDTI-MO-AU METALLIZATION SYSTEMS FOR GAAS DIGITAL INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2985-2991
Authors:
SESHITA T
IKEDA Y
WAKIMOTO H
ISHIDA K
TERADA T
MATSUNAGA T
SUZUKI T
KITAURA Y
UCHITOMI N
Citation: T. Seshita et al., A 20-GHZ 8-BIT MULTIPLEXER IC IMPLEMENTED WITH 0.5-MU-M WNX W-GATE GAAS-MESFETS/, IEEE journal of solid-state circuits, 29(12), 1994, pp. 1583-1588
Risultati:
1-19
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