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Citation: K. Nishihori et al., A SELF-ALIGNED GATE GAAS-MESFET WITH P-POCKET LAYERS FOR HIGH-EFFICIENCY LINEAR POWER-AMPLIFIERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1385-1392
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Citation: T. Sasaki et al., GATE CURRENT CONTROL METHOD BY PULL-DOWN FETS FOR 0-28-DB GAAS VARIABLE ATTENUATOR IN DIRECT-CONVERSION MODULATOR-IC FOR 1.9-GHZ-PHS, IEICE transactions on electronics, E80C(6), 1997, pp. 794-799
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