Authors: UH HS PARK BG LEE JD

Citation: Hs. Uh et al., SURFACE APPLICATION OF MOLYBDENUM SILICIDE ONTO GATED POLY-SI EMITTERS FOR ENHANCED FIELD-EMISSION PERFORMANCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 866-870

Authors: NAM JH UH HS LEE JD IHM JD KIM YH CHOI KM

Citation: Jh. Nam et al., CHARACTERISTICS AND CIRCUIT MODEL OF A FIELD-EMISSION TRIODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 916-919

Authors: UH HS PARK BG LEE JD

Citation: Hs. Uh et al., IMPROVEMENT OF ELECTRON-EMISSION EFFICIENCY AND STABILITY BY SURFACE APPLICATION OF MOLYBDENUM SILICIDE ONTO GATED POLY-SI FIELD EMITTERS, IEEE electron device letters, 19(5), 1998, pp. 167-170

Authors: UH HS KWON SJ LEE JD

Citation: Hs. Uh et al., PROCESS DESIGN AND EMISSION PROPERTIES OF GATED N(-PANEL DISPLAY APPLICATIONS() POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS FOR FLAT), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 472-476

Authors: UH HS LEE JD

Citation: Hs. Uh et Jd. Lee, NEW FABRICATION METHOD OF SILICON FIELD EMITTER ARRAYS USING THERMAL-OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 456-460

Authors: UH HS KWON SJ LEE JD

Citation: Hs. Uh et al., A NOVEL FABRICATION PROCESS OF A SILICON FIELD EMITTER ARRAY WITH THERMAL OXIDE AS A GATE INSULATOR, IEEE electron device letters, 16(11), 1995, pp. 488-490