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Results:
1-9
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Results: 9
Authors:
MARET M
ULHAQBOUILLET C
STAIGER W
CADEVILLE MC
LEFEBVRE S
BESSIERE M
Citation: M. Maret et al., INVESTIGATION OF CHEMICAL ORDERING IN MBE-GROWN COXPT1-X FILMS BY X-RAY-DIFFRACTION AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Thin solid films, 319(1-2), 1998, pp. 191-196
Authors:
CZIRAKI A
PIERRONBOHNES V
ULHAQBOUILLET C
TOTHKADAR E
BAKONYI I
Citation: A. Cziraki et al., A CROSS-SECTIONAL HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ELECTRODEPOSITED NI-CU CU MULTILAYERS/, Thin solid films, 318(1-2), 1998, pp. 239-242
Authors:
KUBLER L
DENTEL D
BISCHOFF JL
GHICA C
ULHAQBOUILLET C
WERCKMANN J
Citation: L. Kubler et al., SI ADATOM SURFACE MIGRATION BIASING BY ELASTIC STRAIN GRADIENTS DURING CAPPING OF GE OR SI1-XGEX HUT ISLANDS, Applied physics letters, 73(8), 1998, pp. 1053-1055
Authors:
WERCKMANN J
CHELLY R
ULHAQBOUILLET C
ROMEO M
GHICA C
Citation: J. Werckmann et al., HRTEM STUDY OF SI1-XGEX, Thin solid films, 294(1-2), 1997, pp. 80-83
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., INFLUENCE OF COPPER CONTAMINATION ON RECOMBINATION ACTIVITY OF MISFITDISLOCATIONS IN SIGE SI EPILAYERS - TEMPERATURE-DEPENDENCE OF ACTIVITY AS A MARKER CHARACTERIZING THE CONTAMINATION LEVEL/, Journal of applied physics, 78(7), 1995, pp. 4573-4583
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 52-55
Authors:
LEFEBVRE A
ULHAQBOUILLET C
Citation: A. Lefebvre et C. Ulhaqbouillet, MULTIPLICATION OF MISFIT DISLOCATIONS IN INXGA1-XAS GAAS HETEROSTRUCTURES/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 70(6), 1994, pp. 999-1012
Authors:
ULHAQBOUILLET C
LEFEBVRE A
DIPERSIO J
Citation: C. Ulhaqbouillet et al., CROSS-SLIP IN THE 1ST STAGES OF PLASTIC RELAXATION IN INXGA1-XAS GAASHETEROSTRUCTURES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(5), 1994, pp. 995-1015
Authors:
ULHAQBOUILLET C
LEFEBVRE A
Citation: C. Ulhaqbouillet et A. Lefebvre, ON THE FORMATION OF EDGE DISLOCATIONS IN INXGA1-XAS GAAS HETEROSTRUCTURES WITH X-LESS-THAN 0-CENTER-DOT-20/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 68(6), 1993, pp. 1273-1294
Risultati:
1-9
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